Critical Role of the Semiconductor–Electrolyte Interface in Photocatalytic Performance for Water-Splitting Reactions Using Ta₃N₅Particles

Distinct photocatalytic performance was observed when Ta 3 N 5 was synthesized from commercially available Ta 2 O 5 or from Ta 2 O 5 prepared from TaCl 5 via the sol–gel route. With respect to photocatalytic O 2 evolution with Ag + as a sacrificial reagent, the Ta 3 N 5 produced from commercial Ta 2 O 5 exhibited higher activity than the Ta 3 N 5 produced via the sol–gel route. When the Ta 3 N 5 photocatalysts were decorated with Pt nanoparticles in a similar manner, the Ta 3 N 5 from the sol–gel route exhibited higher photocatalytic hydrogen evolution activity from a 10% aqueous methanol solution than Ta 3 N 5 prepared from commercial Ta 2 O 5 where no hydrogen can be detected. Detailed surface and bulk characterizations were conducted to obtain fundamental insight into the resulting photocatalytic activities. The characterization techniques, including XRD, elemental analysis, Raman spectroscopy, UV–vis spectroscopy, and surface-area measurements, revealed only negligible differences between these two photocatalysts. Our thorough characterization of the surface properties demonstrated that the very thin outermost layer of Ta 3 N 5, with a thickness of a few nanometers, consists of either the reduced state of tantalum (TaN) or an amorphous phase. The extent of this surface layer was likely dependent on the nature of precursor oxide surfaces. DFT calculations based on partially oxidized Ta 3 N 4.83 O 0.17 and N deficient Ta 3 N 4.83 consisting of reduced Ta species well described the optoelectrochemical properties obtained from the experiments. Electrochemical and Mott–Schottky analyses demonstrated that the surface layer drastically affects the energetic picture at the semiconductor–electrolyte interface, which can consequently affect the photocatalytic performance. Chemical etching of the surface of Ta 3 N 5 particles to remove this surface layer unites the photocatalytic properties with the photocatalytic performance of these two materials. Mott–Schottky plots of these chemically etched Ta 3 N 5 materials exhibited similar characteristics. This result suggests that the surface layer (1–2 nm) determines the electrochemical interface, which explains the different photocatalytic performances of these two materials.