Dependence of the properties of compositionally graded Pb(Zr,Ti)O3 ferroelectric films of the bottom electrode
Source abstract
Abstract
Abstract Compositionally graded Pb(Zr , Ti)O 3 thin films were prepared on the Pt(1 1 1)/Ti/SiO 2 /Si, LNO/Si(1 0 0) and LNO/Pt(1 1 1)/Ti/SiO 2 /Si substrates by a modified sol–gel method and rapid heat-treatment. The composition depth profile of a typical up-graded film was determined using a combination of auger electron spectroscopy and Ar-ion etching. The crystallographic orientation and the microstructure of the resulting graded PZT thin films on the different substrates were characterized by XRD. The dielectric and ferroelectric properties of the graded PZT films were discussed. The graded PZT films on LNO/Pt/Ti/SiO 2 /Si and LNO/Si(1 0 0) substrates have larger dielectric constant and remnant polarizations compared to that grown on Pt/Ti/SiO 2 /Si substrates.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Dielectric materials and actuators
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
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