Application of metal induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to system-on-glass display

Abstract Based on MIUC technology, high-performance poly-Si TFT row scanning and column driving circuits were fabricated. The starting operating voltage of row scanning circuit is 3.5 V. Under an operating voltage of 5 V and a loading capacitance of 22 pf, the falling edge is 150 ns, the rising edge is 205 ns and the maximum operating frequency is higher than 1 MHz. For MIUC poly-Si TFT column driving circuit, the starting operating voltage is 3.5 V. Under an operating voltage of 5 V and a loading capacitance of 22 pf, the rising edge is 200 ns and the signal fading rate is 15% during a frame period of 64 μs. Parallel transfer is used for the RGB signals, achieving a highest operating frequency of 4 MHz. Using these row scanning and column driving circuits, a simple 80 × RGB × 60 AMLCD display system on glass substrate was made and demonstrated good video display effect.