Sol–gel derived LaNiO3 thin films on ZrO2-buffered (100) Si substrates
Source abstract
Abstract
Abstract Perovskite LaNiO 3 (LNO) thin films with a strong (1 0 0)-orientation were fabricated on yttrium-stabilized-zirconia (YSZ)-buffered silicon substrates using a sol–gel method. The YSZ buffer layer showed a stable tetragonal phase, and proved to be effective to suppress inter-diffusion between the Si substrates and the LNO films. Our obtained LNO films on the YSZ buffer layer exhibited a homogenous and smooth surface, with an average grain size below 0.1 μm. The resistivity of the LNO films was in the magnitude order of 10 −4 Ω cm. The crystallographic orientation and low resistivity make the sol–gel derived LNO films very attractive as the bottom electrode layer for perovskite oxide ceramic thin films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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