Piezoresponse Force Microscopy Study of Ferroelectric BaTiO3 Thin Film Directly Deposited on Si(001) by Magnetron Sputtering
Source abstract
Abstract
Direct integration of ferroelectrics with semiconductors is critical to lower the cost and simplify the production procedures for data storage/processing components and miniature sensor/actuator development. By optimizing magnetron sputtering parameters, highly <001> preferential growth of BaTiO3 thin films with reproducible ferroelectric responses have been achieved on Si (001) substrates. The thin film ferroelectric characteristics were systematically studied by piezoresponse force microscopy, and a piezoelectric coefficient d33 of 24pm/V has been measured. It is found that the scanning tip sidewall angle and cantilever tilt affect the contour and size of polarized area.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Houston
Jiangnan University
Capital Normal University
University of Texas at San Antonio
Argonne National Laboratory
Chinese Academy of Sciences
References (28)
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