2000-eV argon ion beam induced formation of multiple chemical states in titanium dioxide mesoporous film
Source abstract
Abstract
Oxygen vacancies were created on the surface of TiO 2 mesoporous film after exposure to a 2000 eV argon ion beam. Confirmation of the presence of the vacancies was conducted through x-ray photoelectron spectroscopy analysis which reveals Ti 2p, O 1s, C 1s, and Ar 2p chemical states at different binding energies. Ti 2p spectra show five distinct peaks corresponding to Ti 2+ 2p 1/2 , Ti 3+ 2p 3/2 , Ti 4+ 2p 3/2 , Ti 3+ 2p 1/2, and Ti 4+ 2p 1/2 states while the Ti 4+ continuously reduced to Ti 3+ and Ti 2+ as the irradiation time of Ar + increases. The Ar + irradiation leads to the lower binding energy of the Ti 2p state with an increase in irradiation time while the binding energy of O 1s becomes higher with irradiation time. The peaks correspond to lattice oxygen; oxygen vacancy and adsorbed oxygen were observed in high-resolution O 1s spectra while the peak area ratio of oxygen vacancy with lattice oxygen increases with irradiation time. The atomic percentage of C 1s decreases with irradiation time while that of Ti 2p, O 1s, and Ar 2p increases with irradiation time. An increase in irradiation time leads to insignificantly shifting of the valence band edge towards the conduction band . The observed response of the prepared nano-particle TiO 2 after 2000 eV Ar + exposure which conveniently creates oxygen vacancies in the crystallographic structure of the semiconductor could be a versatile approach to enhancing the photocatalytic activity of the semiconductor for various industrial and technological applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ion-surface interactions and analysis · Copper-based nanomaterials and applications · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
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