First-principles study of electronic and optical properties of sulfur doped tin monoxide: A potential applicant for optoelectronic devices
Source abstract
Abstract
Abstract Recently, Tin Monoxide (SnO) has attained a considerable interest due to its striking electronic, optical, thermoelectric and gas sensing properties in various advanced technological applications. In this study, we focus on the first principles calculations to examine the structural, electronic and optical properties of the pristine, 1S, 2S, and 3S doped SnO. The plane-wave ultra-soft pseudopotential method is used under the GGA-PBE exchange-correlation energy with supercell approach. Bandgap reduces with the increase in the concentration of doping from 0.460 eV to 0.330 eV, 0.064 eV for 1S, 2S respectively and shows metallic behavior for 3S doped SnO. Formation and cohesive energies decrease in order of Sn15S1O16
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Chalcogenide Semiconductor Thin Films · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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