journal article·2016-08

Mixed grains and orientation-dependent piezoelectricity of polycrystalline Nd-substituted Bi 4 Ti 3 O 12 thin films

Yoonho Ahn, Jong Yeog Son

Ceramics International· Volume 42· Issue 11
Publisher page

Abstract

Abstract Polycrystalline Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) thin films were prepared on Pt/Ta/glass substrates by a pulsed laser deposition method. X-ray diffraction measurements revealed that the BNT thin films were preferentially oriented along the (117) direction although they possessed a polycrystalline structure. Good ferroelectric properties of the BNT thin film were observed with a remnant polarization of 13 μC/cm 2 (2 P r ~26 μC/cm 2 ). The fatigue resistance test exhibited that the ferroelectric polarization of the BNT thin film degraded significantly after around 10 9 switching cycles, which can be attributed to its crystal structure. We investigated the surface morphology and ferroelectric domain structure by atomic force microscopy (AFM) and piezoresponse force microscopy (PFM), respectively. Interestingly, mixed grains consisting of long and circular shapes were observed on the BNT film surface, which corresponded to a - and c -axes orientations of crystal growth, respectively. The PFM study revealed that the piezoelectric coefficient ( d 33 ) of the long grains was much larger than that of the circular grains.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Acoustic Wave Resonator Technologies

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References (33)

Show source-provided references
1. Crystal growth, dielectric and polarization reversal properties of Bi4Ti3O12 single crystal10.1143/JJAP.31.3108 ↗
2. Fatigue-free ferroelectric capacitors with platinum electrodes10.1038/374627a0 ↗
3. Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition10.1063/1.1352566 ↗
4. Applications of modern ferroelectrics10.1126/science.1129564 ↗
5. Highly a-oriented SrBi2Ta2O9 thin film on (111) Pt/TiO2/SiO2/Si substrate by eclipse pulsed laser deposition10.1016/j.tsf.2008.11.131 ↗
6. A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube10.1021/nn1021296 ↗
7. Four-states multiferroic memory embodied using Mn-doped BaTiO3 Nanorods10.1021/nn4017422 ↗
8. Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition10.1143/JJAP.42.2850 ↗
9. Preparation of a-b plane oriented Nb-doped Bi4Ti3O12 ceramics by magnetic alignment via gelcasting10.1016/j.materresbull.2006.04.006 ↗
10. A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer10.1016/j.carbon.2012.04.027 ↗
11. Enhanced multiferroic properties and domain structure of La-doped BiFeO3 thin films10.1016/j.scriptamat.2010.06.013 ↗
12. La and Nb codoped BiFeO3 multiferroic thin films on LaNiO3/Si and IrO2/Si substrates10.1063/1.2890068 ↗
13. Improved ferroelectric properties in multiferroic BiFeO3 thin films through La and Nb codoping10.1103/PhysRevB.77.092101 ↗
14. Doping BiFeO3: approaches and enhanced functionality10.1039/c2cp43082g ↗
15. Strain tuning of ferroelectric thin films10.1146/annurev.matsci.37.061206.113016 ↗
16. Enhancement of ferroelectricity in strained BaTiO3 thin films10.1126/science.1103218 ↗
17. Multiferroic phasetTransition near room temperature in BiFeO3 films10.1103/PhysRevLett.107.237601 ↗
18. Epitaxially strained BaTiO3 thin films on LaAlO3 substrates with La0.5Sr0.5MnO3 electrodes: enhanced ferroelectric property and domain structure10.1016/j.matlet.2015.08.080 ↗
19. Asymmetric switching and imprint in (La,S)r)CoO3/Pb(Zr,Ti)(O3/(La,S)r)(CoO3) heterostructures10.1080/10584589708221684 ↗
20. Asymmetric hysteresis loops, leakage current and capacitance voltage behaviors in ferroelectric PZT films deposited on a Pt/Al2O3/SiO2/Si substrate by MOCVD method with a vapor-deposited gold top electrode10.7763/IJAPM.2011.V1.28 ↗
21. Effect of grain size on Bi4Ti3O12 thin film properties10.1143/JJAP.37.5166 ↗
22. Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi4Ti3O12 thin films10.1063/1.1629372 ↗
23. Growth and properties of (104)-oriented ferroelectric Nd-substituted Bi4Ti3O12 films on Si(100) using (111)-oriented SrRuO3/Pt electrodes10.1063/1.2168260 ↗
24. Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes10.1063/1.1381038 ↗
25. Polarization fatigue characteristics of sol-gel ferroelectric Pb(Zr0.4Ti0.6)O3 thin-film capacitors10.1143/JJAP.33.3996 ↗
26. Polarization fatigue in ferroelectric thin films and related materials10.1063/1.3056603 ↗
27. Polarization switching and relaxation dynamics of bismuth layered ferroelectric thin films: role of oxygen defect sites and crystallinity10.1103/PhysRevB.84.094112 ↗
28. Origins for fatigue-free properties of Bi-layered perovskite materials
29. Frequency effect on electrical fatigue behaviour of lead zirconate titanate ceramics10.1049/el.2012.1625 ↗
30. Hong · 2004
31. A review on conduction mechanisms in dielectric films10.1155/2014/578168 ↗
32. The effects of La substitution on ferroelectric domain structure and multiferroic properties of epitaxially grown BiFeO3 thin films10.1063/1.4822327 ↗
33. Tetragonally strained BiFeO3 thin film on single crystal Rh substrate10.1016/j.jcrysgro.2012.10.013 ↗