Improving electrical conductivity and wear resistance of hafnium nitride films via tantalum incorporation
Source abstract
Abstract
Abstract Transition metal nitrides are being widely applied, as durable sensors, semiconductor and superconductor devices, their electrical conductivity and wear resistance having a significant influence on these applications. However, there are few reports about how to improve above properties. In this paper, tantalum was incorporated into hafnium nitride films through Hf1-xTaxNy [x=Ta/(Hf+Ta), y=N/(Hf+Ta)] solid solution. The electrical conductivity and wear resistance of the films were significantly improved, due to the increase of the electron concentration (tantalum has one more valence electron than hafnium) and the increase in H/E and H3/E2 ratios caused by the effect of solid solution hardening, respectively. The highest electrical conductivity of Hf1-xTaxNy films is 8.3×105 S m−1, which is 1.7 times and 5.2 times of that of hafnium nitride and tantalum nitride films, respectively. In addition, the lowest wear rate of films is 1.2×10−6 mm3/N m, which is only 10% and 48% of that of hafnium nitride and tantalum nitride films, respectively. These results indicate that alloying with another transition metal is an effective method to improve electrical conductivity and wear resistance of transition metal nitrides.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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