Low-temperature fabrication of sol–gel NiO film for optoelectronic devices based on the ‘fuel’ of urea
Source abstract
Abstract
Abstract In this work, NiO coating is fabricated by a low temperature ‘combustion process’ driven by ‘chemical oven’ on quartz and indium tin oxide (ITO) substrates followed by an annealing process in air at 225 °C for 2 h. The NiO coating is analyzed by means of thermalgravimetric differential thermal analysis (TG-DTA), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electric microscopy (SEM), atomic force microscope (AFM), and UV–visible spectrometer. A prelimilary photovoltaic performance measurement of the fabricated device (ITO/NiO/poly-TPD/PC 71 BM/Al) shows a short circuit current density ( J sc ) of 5.28 mA cm −2 and power conversion efficiency (PCE) of 1.56% under an illumination of 100 mW cm −2 . The PCE of device with combustion NiO HTLs is almost 10-fold higher than those of the devices based on common NiO HTLs. The combustion fabricated NiO coating may provide an effective approach to fabricate other NiO-based optoelectrical devices at relative low temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Thin-Film Transistor Technologies · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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