Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates
Source abstract
Abstract
Abstract The nanoporous (NP) GaN wafers which were fabricated by electrochemical etching (EC) method were used as substrates to deposit Er-doped Ga2O3 epitaxial films by pulsed layer deposition (PLD). The epitaxial relationship between the GaN and Er doped β-Ga2O3 film was Ga2O3 (−201) ‖ GaN (0001) with Ga2O3 [010] ‖ GaN [-12-10]. Compared to the Er doped films on the epi-GaN wafers with the porosity of 0%, ~20% and ~60%, the β-Ga2O3 film deposited on the wafer with a porosity of ~40%, which has an energy bandgap of ~4.89 eV, has the best crystal quality and optoelectronic properties. The performance enhancement should be due to improved crystalline quality as a result of the existence of nanopores in the etched substrates. The excellent properties of Er doped Ga2O3 films indicated that the films have great potential to fabricate Ga2O3 optoelectronic devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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