Optoelectronic properties of Zn-doped Cu3Se2 nanosheets for photovoltaic application
Source abstract
Abstract
Abstract Thin films of Zn-doped copper selenide (Cu3Se2) nanostructures with different Zn concentrations were deposited on fluorine-doped tin oxide (FTO) glass substrates by electrodeposition method. The structural, optical, electrical, and photovoltaic properties of the deposited films were investigated by different analyses. X-ray diffraction (XRD) pattern showed the crystalline and tetragonal structure of the samples. The results of XRD pattern also showed that the peaks shifted to higher angles by increasing the Zn dopant, indicating the influence of dopant on the crystalline structure of Cu3Se2. Electron microscopy analysis showed that the films had a sheet-like shape whose thickness changed by altering the dopant percentage; the highest number of sheets belonged to the samples with higher concentrations of dopant. The photoluminescence (PL) analysis of the Cu3Se2 nanostructures revealed that the peaks in the green and infrared regions shifted to shorter wavelengths and the intensity of emission peaks increased for the Zn-doped sample with the highest concentration, compared with the un-doped sample. Based on the absorption spectrum analysis, the optical energy band gap increased with raising the percentage of Zn dopant. Finally, the electrical and photovoltaic parameters of the solar cells prepared via Cu3Se2 nanosheets were examined. The doped sample which had the highest percentage of doping, showed the highest efficiency (η) of ~1.30%.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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