Structural and electrical properties of thick film thermistors based on perovskite La–Mn–Al–O
Source abstract
Abstract
LaMnO3 thick films doped with Al were fabricated on Al 2O3 substrates by screen printing technique. Significantly composition-dependent structural phase transformation and grain size were observed in Al-doped LMO thick films by X-ray diffraction and scanning electron microscopy. The resistivity of all the thick films decreased with the increase of temperature, indicating a negative temperature coefficient effect. Al doping resulted in a sharp rise in room resistivity (ρ0) and thermal constant (B) as compared with non-doped films. Among the films investigated, the film with composition x=0.4 showed a unique electrical property and was further examined in detail using the complex impedance analysis, in order to unveil the structure-property relationship.
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Research context
OpenAlex topics: Electrical and Thermal Properties of Materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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