Characterization of non-stoichiometric Ga2O3-x thin films grown by radio-frequency powder sputtering
Source abstract
Abstract
Abstract We report the synthesis and characterization of non-stoichiometric Ga2O3-x thin films deposited on sapphire (0001) substrates by radio-frequency powder sputtering. The chemical and electronic states of the non-stoichiometric Ga2O3-x thin films were investigated. By sputtering in an Ar atmosphere, the as-grown thin films become non-stoichiometric Ga2O2.7, due to the difference in sputtering yield between Ga and O species of the Ga2O3 target. The electronic states of the thin films consist of ~85% Ga3+ and ~15% Ga1+, corresponding to Ga2O3 and Ga2O, respectively. The films have the electrical characteristics of a semiconductor, with electrical conductivity of approximately 5.0 × 10-4 S cm-1 and a carrier concentration of 4.5 × 1014 cm-3 at 300 K.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
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References (32)
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1. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
2. High-Responsivity Deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films10.1021/acsphotonics.7b01054 ↗
3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics10.1063/1.4821858 ↗
4. Field-plated Ga2O3 MOSFETs with a breakdown voltage of over 750 V10.1109/LED.2015.2512279 ↗
5. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
6. Recent progress in Ga2O3 power devices10.1088/0268-1242/31/3/034001 ↗
7. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage10.1063/1.4967931 ↗
8. Heteroepitaxy of corundum-structured α-Ga2O3 thin films on α-Al2O3 substrates by ultrasonic mist chemical vapor deposition10.1143/JJAP.47.7311 ↗
9. Growth and characterization of α-, β-, and ε-phases of Ga2O3 using MOCVD and HVPE techniques10.1080/21663831.2018.1443978 ↗
10. Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors10.1143/JJAP.46.7217 ↗
11. Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors10.1364/OME.5.001240 ↗
12. Heteroepitaxial growth of multidomain Ga2O3/sapphire(001) thin films deposited using radio frequency magnetron sputtering10.1016/j.matlet.2014.01.030 ↗
13. Self-catalytic growth of β-Ga2O3 nanowires deposited by radio-frequency magnetron sputtering
14. Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide10.1021/acsphotonics.7b00359 ↗
15. Electrical, optical, and magnetic properties of Sn doped α-Ga2O3 thin films10.1063/1.4958860 ↗
16. Growth and characterization of Sn doped β-Ga2O3 thin films and enhanced performance in a solar-blind photodetector10.1007/s11664-017-5291-5 ↗
17. Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behavior10.1038/ncomms4473 ↗
18. Amorphous gallium oxide grown by low-temperature PECVD10.1116/1.5018800 ↗
19. Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor10.1038/am.2017.20 ↗
20. Metallic clusters in nonstoichiometric gallium oxide films10.1063/1.3531536 ↗
21. A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide10.1038/nmat2164 ↗
22. Characterization of oxygen deficient gallium oxide films grown by PLD10.1016/j.apsusc.2012.10.136 ↗
23. Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process10.1039/C5RA21160C ↗
24. Gallium oxide thin films: a new material for high-temperature oxygen sensors10.1016/0925-4005(91)80148-D ↗
25. Review–RF sputtered films of Ga2O310.1149/2.0141907jss ↗
26. Formation of various phases of gallium oxide films depending on substrate planes and deposition gases10.1016/j.vacuum.2015.10.009 ↗
27. Growth of ZnO/sapphire heteroepitaxial thin films by radio-frequency sputtering with a raw powder target10.1016/j.tsf.2010.03.032 ↗
28. Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures10.1016/S0040-6090(02)00202-X ↗
29. Epitaxial growth of gallium oxide films on c-cut sapphire substrate10.1016/j.tsf.2015.06.034 ↗
30. Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction10.1063/1.4998804 ↗
31. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition10.1063/1.4991363 ↗
32. Schottky x-ray detectors based on a bulk β-Ga2O3 substrate10.1063/1.5020178 ↗