journal article·2024-01

Growth of gallium cerium oxide passivation layer on 4H-Silicon carbide substrate and its metal-oxide-semiconductor characteristics

Abdul Shekkeer Kammutty Musliyarakath, Kuan Yew Cheong, Hock Jin Quah

Ceramics International· Volume 50· Issue 1
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OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · ZnO doping and properties

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