Electric field-induced toughening in GaN piezoelectric semiconductor ceramics
Source abstract
Abstract
Abstract In this paper, the effect of an applied electric field on fracture toughness of polarized GaN piezoelectric semiconductor ceramics was studied by using experimental and numerical methods. The results show that fracture toughness increases by 22% under a field intensity of 0.83 kV cm−1, and with further increase of the electrical filed, fracture toughness remains unchanged. This is completely different from the fracture characteristics of traditional piezoelectric ceramics that is thought to decrease with an applied electric field. The reason for such a difference is attributed to the redistribution of free electrons. It is expected that this finding will be instructive to the reliability design of piezoelectric semiconductor structures and devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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