Significance of polymer matrix on the resistive switching performance of lead-free double perovskite nanocomposite based flexible memory device
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OpenAlex topics: Advanced Memory and Neural Computing · Perovskite Materials and Applications · Conducting polymers and applications
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References (33)
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1. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
2. Redox-based resistive switching memories – nanoionic mechanisms, prospects, and challenges10.1002/adma.200900375 ↗
3. Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell non-volatile memory applications10.1088/0268-1242/30/7/075002 ↗
4. Influence of nanoscale charge trapping layer on the memory and synaptic characteristics of a novel rubidium lead chloride quantum dot based memristor10.1002/aelm.202101015 ↗
5. 1D hexagonal HC(NH2)2PbI3 for multilevel resistive switching nonvolatile memory10.1002/aelm.201800190 ↗
6. Recent advances in resistive random access memory based on lead halide perovskite10.1002/inf2.12162 ↗
7. Induced vacancy-assisted filamentary resistive switching device based on RbPbI3–xClx perovskite for RRAM application10.1021/acsami.0c10123 ↗
8. Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content10.1016/j.ceramint.2021.10.091 ↗
9. Probing electron density across Ar+ irradiation-induced self-organized TiO2−x nanochannels for memory application10.1063/1.4954166 ↗
10. A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory10.1063/1.4976709 ↗
11. Stable charge retention in graphene-MoS2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices10.1016/j.orgel.2018.03.039 ↗
12. Highly-stable memristive devices based on poly(methylmethacrylate): CsPbCl3 perovskite quantum dot hybrid nanocomposites10.1016/j.orgel.2018.02.001 ↗
13. Highly stable, phase pure Cs2AgBiBr6 double perovskite thin films for optoelectronic applications10.1039/C7TA06816F ↗
14. Recent developments of lead-free halide double perovskites: a new superstar in the optoelectronic field10.1039/D2MA00071G ↗
15. Light-activated multilevel resistive switching storage in Pt/Cs2AgBiBr6/ITO/glass devices10.1186/s11671-021-03636-6 ↗
16. Resistive switching characteristics improved by visible-light irradiation in a Cs2AgBiBr6-based memory device10.3390/nano11061361 ↗
17. Significant roles of the polymer matrix in the resistive switching behavior of polymer-based atomic switches10.1088/1361-6463/ab35bf ↗
18. Performance comparison of hybrid resistive switching devices based on solution-processable nanocomposites10.1016/j.apsusc.2018.03.008 ↗
19. Spray-coated lead-free Cs2AgBiBr6 double perovskite solar cells with high open-circuit voltage10.1002/solr.202100422 ↗
20. High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films10.1039/C8TC02305K ↗
21. Diverging expressions of anharmonicity in halide perovskites10.1002/adma.202107932 ↗
22. Giant electron–phonon coupling and deep conduction band resonance in metal halide double perovskite10.1021/acsnano.8b02936 ↗
23. Ionic conductivity of poly(ethylene oxide) having charges on the chain end10.1016/0167-2738(95)00078-K ↗
24. Conducting bridge resistive switching behaviors in cubic MAPbI3, orthorhombic RbPbI3, and their mixtures10.1002/aelm.201800586 ↗
25. Competition between metallic and vacancy defect conductive filaments in a CH3NH3PbI3-based memory device10.1021/acs.jpcc.7b12817 ↗
26. Improvement of the resistive switching characteristics upon halide mixing in an all-inorganic RbPbI3 perovskite polymer composite based flexible device10.1021/acs.jpcc.1c02203 ↗
27. Flexible, transparent resistive switching device based on topological insulator Bi2Se3-organic composite10.1063/1.5042332 ↗
28. High performance resistive memory device based on highly stable layered CsPb2Br5 perovskite polymer nanocomposite10.1016/j.jallcom.2022.166014 ↗
29. Compliance current-dependent dual-functional bipolar and threshold resistive switching in all-inorganic rubidium lead-bromide perovskite-based flexible device10.1021/acsaelm.0c00130 ↗
30. Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides10.1021/acs.nanolett.7b04342 ↗
31. Flexible all-inorganic perovskite CsPbBr3 nonvolatile memory device10.1021/acsami.6b15149 ↗
32. Flexible hybrid organic–inorganic perovskite memory10.1021/acsnano.6b01643 ↗
33. Conduction mechanism of valence change resistive switching memory: a survey10.3390/electronics4030586 ↗