Microstructures and optoelectronic properties of nickel oxide films deposited by reactive magnetron sputtering at various working pressures of pure oxygen environment
Source abstract
Abstract
Abstract Thanks to the intrinsic p-type conductivity, NiO films show great potential for applications in various domains. In this work, NiO x films were deposited in three dimensional physical vapor deposition (3D-PVD) system from metallic nickel target in pure oxygen conditions. Optical emission spectroscopy (OES) was employed to analyze the plasma state during the deposition. The variation of the film's structural and optoelectronic properties as a function of the oxygen pressure was investigated. It is found that the oxygen content in NiO x films is more evident for the films deposited with lower oxygen pressure. More Ni 3+ ions and interstitial oxygen associated with more Ni 2+ vacancies and holes are believed to exist in these films. Therefore, their conductivity is higher than the films deposited at higher oxygen pressure. Additionally, with an increase of oxygen pressure, the film's crystallinity is enhanced, and the film's transmittance as well as the film's band gap improves.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Recent progress in transparent oxide semiconductors: materials and device application10.1016/j.tsf.2006.12.125 ↗
2. Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels10.1016/j.apsusc.2010.08.080 ↗
3. Resistance and transparency tunable Ag-inserted transparent InZnO films for capacitive touch screen panels10.1016/j.tsf.2013.10.007 ↗
4. Optically transparent and electrically conductive NiO window layer for Si solar cells10.1016/j.matlet.2016.03.074 ↗
5. Transparent conductive ZnO layers on polymer substrates: thin film deposition and application in organic solar cells10.1016/j.tsf.2015.08.015 ↗
6. Study on In-Zn-Sn-O and In-Sn-Zn-O films deposited on PET substrate by magnetron co-sputtering system10.1016/j.surfcoat.2008.06.091 ↗
7. Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display10.1016/j.tsf.2012.11.035 ↗
8. Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels10.1016/j.tsf.2011.04.067 ↗
9. Past achievements and future challenges in the development of optically transparent electrodes10.1038/nphoton.2012.282 ↗
10. In situ crystallization of highly conducting and transparent ITO thin films deposited by RF magnetron sputtering10.1016/j.vacuum.2016.07.035 ↗
11. Properties of fluorine-doped SnO2 thin films by a green sol-gel method10.1016/j.mssp.2015.07.047 ↗
12. Electrical and optical properties of Al:ZnO films prepared by ion-beam assisted sputtering10.1016/j.ceramint.2015.10.067 ↗
13. Transparent conducting p-type NiO thin films prepared by magnetron sputtering10.1016/0040-6090(93)90636-4 ↗
14. Effects of potassium incorporation on the structural, optical, vibrational and electrical properties of NiO sprayed thin films for p-type optical windows10.1016/j.ceramint.2016.02.040 ↗
15. Tunable electrical properties of NiO thin films and p-type thin-film transistors10.1016/j.tsf.2015.09.025 ↗
16. Origins of the doping asymmetry in oxides: hole doping in NiO versus electron doping in ZnO10.1103/PhysRevB.75.241203 ↗
17. Post deposition annealing of NiOx thin film: a transition from n-type to p-type conductivity for short wave length optoelectronic devices10.1557/jmr.2012.443 ↗
18. Microstructures, electrical and optical properties of non-stoichiometric p-type nickel oxide films by radio frequency reactive sputtering10.1016/j.surfcoat.2010.07.082 ↗
19. Effect of oxygen partial pressure on the electrical and optical properties of highly (200) oriented p-type Ni1−xO films by DC sputtering10.1007/s10853-006-1153-x ↗
20. Influence of oxygen partial pressure on the structural, optical and electrical properties of Cu-doped NiO thin films10.1088/0031-8949/87/01/015801 ↗
21. Characterisation of sprayed nickel oxide thin films10.4236/jmp.2011.210147 ↗
22. Structural, electrical and mechanical properties of NiO thin films grown by pulsed laser deposition10.1016/j.apsusc.2010.07.006 ↗
23. Temperature effect on the electrical properties of undoped NiO thin films10.1016/j.renene.2009.05.014 ↗
24. Deposition of NiOx thin films with radio frequency magnetron sputtering and their characteristics as a source/drain electrode for the pentacene thin film transistor10.1116/1.2981075 ↗
25. 3D interconnected macro-mesoporous electrode with self-assembled NiO nanodots for high-performance supercapacitor-like Li-ion battery10.1016/j.nanoen.2016.02.017 ↗
26. Magnetron sputtering: a review of recent developments and applications10.1016/S0042-207X(99)00189-X ↗
27. High rate thick film growth10.1146/annurev.ms.07.080177.001323 ↗
28. Reactive magnetron sputtering of thin films: present status and trends10.1016/j.tsf.2004.07.041 ↗
29. O. Madelung, U. Rössler, M. Schulz, Springer Materials, NiO: Lattice Parameter, Thermal Expansion, DOI: 10.1007/10681735_510.10.1007/10681735_510 ↗
30. Effect of oxygen partial pressure on the structural, optical and electrical properties of sputtered NiO films10.1016/j.ceramint.2011.04.121 ↗
31. Effect of oxygen incorporation in the Mg2Si lattice on its conductivity type – a possible reason of the p-type conductivity of postannealed Mg2Si thin film10.1016/j.jallcom.2016.02.229 ↗
32. Effect of excess oxygen on the electrical properties of transparent p-type conducting CuAlO2+x thin films10.1016/j.solmat.2005.01.003 ↗
33. Conversion of p-type to n-type conductivity in undoped ZnO films by increasing operating temperature10.1016/j.apsusc.2010.08.030 ↗
34. The electrical stability of In-doped ZnO thin films deposited by RF sputtering10.1088/1361-6463/aa5002 ↗
35. MgO (100) template layer for CdO thin film growth: strategies to enhance microstructural crystallinity and charge carrier mobility10.1063/1.2195093 ↗
36. Improved room temperature electron mobility in self-buffered anatase TiO2 epitaxial thin film grown at low temperature10.7567/JJAP.53.090305 ↗
37. Influence of substrate temperature on electrical and optical properties of p-type semitransparent conductive nickel oxide thin films deposited by radio frequency sputtering10.1016/j.apsusc.2007.09.051 ↗
38. Effects of potassium incorporation on the structural, optical, vibrational and electrical properties of NiO sprayed thin films for p-type optical windows10.1016/j.ceramint.2016.02.040 ↗
39. New approach to optical analysis of absorbing thin solid films10.1364/AO.26.001737 ↗
40. Tauc · 1974
41. Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process10.1088/1674-4926/36/8/082002 ↗
42. Effect of annealing on structural and optical properties of Ni(1−x)MnxO nanostructures thin films10.1016/j.physb.2016.09.016 ↗
43. Influence of annealing temperature on In2O3 properties grown by an ultrasonic spray CVD process10.1016/j.ijleo.2016.04.100 ↗