Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors
Source abstract
Abstract
Abstract In this paper, we report the annealing effects on the micro-structure and the electrical properties of sol–gel-derived Y 2 O 3 thin films and further impact on the InZnO thin film transistors (IZO TFTs). The Y 2 O 3 thin films annealed at 400 °C showed a low current density of ~10 −8 A/cm 2 at an applied voltage of 1 V. A relative high capacitance density of 345.7 nF/cm 2 , measured at 1 kHz, was obtained for same Y 2 O 3 capacitor. Based on its potential as the dielectric layer, IZO TFTs exhibited a high field effect mobility of 20.93 cm 2 /Vs, an acceptable subthreshold swing of 0.67 V/decade, and a reasonable I on /I off ratio of 1.2×10 6 . Our results demonstrate that solution-processed Y 2 O 3 thin film is a promising gate dielectric candidate for high-performance oxide TFT.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. The electrical conduction properties of poly-crystalline indium-zinc-oxide film10.1063/1.4865504 ↗
2. Amorphous IZO-based transparent thin film transistors10.1016/j.tsf.2007.10.081 ↗
3. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature10.1063/1.2430917 ↗
4. Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs10.1016/j.tsf.2007.03.176 ↗
5. Room temperature deposited indium zinc oxide thin film transistors10.1063/1.2746084 ↗
6. High-mobility amorphous In2O3–10wt% ZnO thin film transistors10.1063/1.2335372 ↗
7. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors10.1063/1.4894769 ↗
8. Direct observation of the band gap shrinkage in amorphous In2O3–ZnO thin films10.1063/1.4802441 ↗
9. Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors10.1063/1.4804667 ↗
10. Yttrium silicate formation on silicon: effect of silicon pre-oxidation and nitridation on interface reaction kinetics10.1063/1.1316073 ↗
11. Preparation and characterization of Sol–Gel derived Y2O3 thin films10.1023/A:1008671206691 ↗
12. Properties of transparent yttrium oxide dielectric films prepared by sol–gel process10.1016/j.ceramint.2011.09.060 ↗
13. Growth and characterization of Y2O3 thin film original research article10.1016/j.physb.2008.10.022 ↗
14. Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air10.1063/1.3568893 ↗
15. High- performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps
16. Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors10.1016/j.tsf.2009.02.020 ↗
17. Characterization of Y2O3 gate dielectric on n-GaAs substrates10.1016/j.apsusc.2009.10.046 ↗
18. A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors10.1039/c2jm34162j ↗
19. Enhanced optical constants of nano-crystalline yttrium oxide thin films10.1063/1.3524202 ↗
20. Evolution of composition, microstructure and optical properties of yttrium oxide thin films with substrate temperature10.1016/j.surfcoat.2012.03.074 ↗
21. Study of rf-sputtered yttrium oxide films on silicon by capacitance measurements10.1063/1.359588 ↗
22. Yttrium oxide films prepared by pulsed laser deposition10.1063/1.366615 ↗
23. Electrical properties of Y2O3 high-κ gate dielectric on Si (001): the influence of post-metallization annealing10.1063/1.1558965 ↗
24. Atomic beam deposition of lanthanum and yttrium based oxide thin films for gate dielectrics10.1063/1.1320464 ↗
25. Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems10.1016/S0040-6090(99)00418-6 ↗
26. Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical vapor deposition10.1063/1.1766412 ↗
27. Deposition of Y2O3 buffer layers on biaxially-textured metal substrates10.1016/S0921-4534(98)00156-7 ↗
28. Annealing dependence study of solution processed ultrathin ZrOx films for gate dielectric applications
29. Optical properties of pure and Al doped ZnO thin films fabricated with plasma produced by excimer laser10.1016/S0040-6090(03)00343-2 ↗
30. High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric
31. Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition10.1016/j.cap.2013.12.006 ↗
32. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrOx dielectric10.1021/am505602w ↗
33. Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film transistors10.1016/j.cap.2013.11.045 ↗
34. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature
35. High-performance In–Zn–O thin-film transistors with a soluble processed ZrO2 gate insulator10.1002/pssr.201307128 ↗
36. High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO2 high-k dielectric grown by spray pyrolysis in ambient air10.1002/adma.201003935 ↗
37. Transferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors10.1038/nmat3572 ↗
38. Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel10.1016/j.microrel.2006.01.012 ↗
39. High-performance InTiZnO thin-film transistors deposited by magnetron sputtering10.1088/0256-307X/30/12/127301 ↗
40. Low-temperature solution-processed zirconium oxide gate insulators for thin-film transistors10.1109/TED.2013.2278206 ↗
41. Characteristics of ZnO thin film transistor using Ta2O5 gate dielectrics10.1016/j.tsf.2013.03.103 ↗