Dielectric enhancement of BaSrTi1.1O3/BaSrTi1.05O3/BaSrTiO3 multilayer thin films prepared by RF magnetron sputtering
Source abstract
Abstract
Abstract BaSrTi 1.1 O 3 /BaSrTi 1.05 O 3 /BaSrTiO 3 multilayer (BSTM) thin films and BaSrTiO 3 (BST) thin films were deposited on LaNiO 3 (LNO)/SiO 2 /Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations revealed that all the films have uniform and crack-free surface morphology with a perovskite structure. The dielectric constant of the BSTM thin films was increased and dielectric loss was decreased compared with those of uniform BST thin films. The dielectric constant of 420, dielectric loss of 0.017, and dielectric tunability of 38% were achieved for the BSTM thin films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices · Microwave Dielectric Ceramics Synthesis
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References (14)
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