Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors
Source abstract
Abstract
Abstract We investigated the rapid thermal annealing (RTA) sequence effect on the electrical, optical, morphological, and structural properties of transparent thin film transistors (TTFTs) with an indium gallium zinc oxide (IGZO) channel and an indium tin oxide (ITO) source/drain. The electrical and optical properties of the IGZO channel and the ITO source/drain electrodes were compared as a function of RTA temperature in ambient air. The performance of a TTFT with only an RTA-processed IGZO channel was compared with that of a TTFT with an RTA-processed IGZO channel and ITO source/drain electrodes. Using the circular transmission line measurement (CTLM) method, we suggest a possible mechanism that explains the effect of the RTA process on the performance of the TTFT with only an annealed IGZO channel vs. that with an annealed IGZO/ITO multilayer. The TTFT with an RTA-processed IGZO/ITO multilayer showed a threshold voltage shift, an improved on/off ratio of 3.54 × 1011, a subthreshold swing of 0.33 V/decade, and a high mobility of 8.69 cm2/V·s. This indicates that simultaneous RTA processing for an IGZO channel and an ITO electrode is beneficial for the fabrication of high-performance TTFTs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Electrical and Thermal Properties of Materials · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (51)
Show source-provided references
1. World's first large size 77-inch transparent flexible OLED display10.1002/jsid.663 ↗
2. Next generation smart window display using transparent organic display and light blocking screen10.1364/OE.26.008493 ↗
3. Intrinsically-stretchable, transparent thin film transistors10.1149/07510.0205ecst ↗
4. The controllable deposition of large area roll-to-roll sputtered ito thin films for photovoltaic applications10.1016/j.renene.2019.07.038 ↗
5. Tunability of indium tin oxide materials for mid-infrared plasmonics applications10.1364/OME.7.002727 ↗
6. ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells10.1080/14686996.2019.1599695 ↗
7. Fully transparent ZnO thin-film transistor produced at room temperature10.1002/adma.200400368 ↗
8. High carrier mobility low-voltage ZnO thin film transistors fabricated at a low temperature via solution processing10.1016/j.ceramint.2018.03.254 ↗
9. Amorphous IZO-based transparent thin film transistors10.1016/j.tsf.2007.10.081 ↗
10. Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors10.1016/j.tsf.2011.06.082 ↗
11. Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (α-ZTO) thin film transistors10.1016/j.materresbull.2014.05.009 ↗
12. High performance solution-processed amorphous zinc tin oxide thin film transistor10.1088/0022-3727/42/3/035106 ↗
13. Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor10.1109/LED.2014.2354598 ↗
14. Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation10.1149/1.3489530 ↗
15. Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications10.1016/j.tsf.2009.01.166 ↗
16. Effect of double-layered Al2O3/SiO2 dielectric materials on In-Ga-Zn-O(IGZO)-based amorphous transparent thin film transistors10.1016/j.ceramint.2014.04.151 ↗
17. Study of sputtered ITO films on flexible invar metal foils for curved perovskite solar cells10.3390/met9020120 ↗
18. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs10.1002/pssr.200600049 ↗
19. Highly stable transparent amorphous oxide semiconductor thin -film transistors having double-stacked active layers10.1002/adma.201002397 ↗
20. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors10.1038/nature03090 ↗
21. Review paper: transparent amorphous oxide semiconductor thin film transistor10.1007/s13391-011-0301-x ↗
22. The effect of annealing ambient on the characteristics of indium-gallium-zinc oxide thin film transistor10.1166/jnn.2011.4360 ↗
23. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing10.1063/1.3020714 ↗
24. Effects of post-deposition plasma treatments on stability of amorphous InGaZnOx thin-film transistors prepared with plasma-assisted reactive magnetron sputtering10.7567/1347-4065/aaec18 ↗
25. Structure and physical properties evolution of ITO film during amorphous-crystalline transition using a highly effective annealing technique10.1016/j.ceramint.2019.05.143 ↗
26. Deposition and characterization of polysilicon films deposited by rapid thermal processing10.1116/1.586082 ↗
27. Oxynitride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygen10.1063/1.107946 ↗
28. Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors10.1063/1.3151827 ↗
29. Effects of composition of sputtering target on the stability of InGaZnO thin film transistor10.1016/j.tsf.2011.01.400 ↗
30. Effects of composition on optical and electrical properties of amorphous In-Ga-Zn-O films deposited using radio-frequency sputtering with O2 gas flows10.1016/j.tsf.2012.07.106 ↗
31. Performance variation according to device structure and the source/drain metal electrode of a-IGZO TFTs10.1109/TED.2012.2220367 ↗
32. Performance and stability of amorphous InGaZnO thin film transistors with a designed device structure10.1063/1.3656444 ↗
33. DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction10.1016/j.tsf.2009.09.176 ↗
34. Influence of deposition condition on electrical properties of a-IGZO films deposited by plasma-enhanced reactive sputtering10.1016/j.jallcom.2018.09.143 ↗
35. Investigation of the high mobility IGZO thin films by using Co-sputtering method10.3390/ma8052769 ↗
36. Influence of channel layer thickness on the electrical performances of inkjet-printed in-Ga-Zn oxide thin-film transistors10.1109/TED.2010.2091131 ↗
37. Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor
38. Improvement of InGaZnO4 thin film transistors characteristics utilizing excimer laser annealing10.1143/APEX.2.021102 ↗
39. Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin -film transistors10.1016/j.tsf.2011.10.062 ↗
40. Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric10.1088/0268-1242/30/1/015003 ↗
41. Effect of thermal annealing on the properties of transparent conductive In-Ga-Zn oxide thin films10.1116/1.4861352 ↗
42. Effect of post-deposition annealing on the structural, optical and electrical properties of IGZO films10.1007/s13391-014-4410-1 ↗
43. Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering10.1016/j.vacuum.2004.01.081 ↗
44. Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates10.1016/j.apsusc.2007.11.063 ↗
45. Extremely thin Al2O3 surface-passivated nanocrystalline ZnO thin-film transistors designed for low process temperature10.1111/jace.14053 ↗
46. Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors10.1016/j.tsf.2011.01.074 ↗
47. Light and bias stability of a-IGZO TFT fabricated by r.f. magnetron sputtering10.1016/j.cap.2011.05.026 ↗
48. Investigation on the change of the performance of Si-Zn-Sn-O thin film transistors under negative bias temperature stress depending on the channel thickness10.1016/j.sse.2018.12.021 ↗
49. Origin of device performance degradation in InGaZnO thin-film transistors after crystallization10.1143/JJAP.51.015601 ↗
50. Annealing temperature dependence on the positive bias stability of IGZO thin-film transistors
51. Multilayer Pt/Al based ohmic contacts for AlGaN/GaN hererostructures stable up to 600°C ambient air10.1016/j.sse.2015.12.002 ↗