Structural and ferroelectric properties of chemical solution deposited (Nd, Cu) co-doped BiFeO3 thin film
Source abstract
Abstract
Abstract Effects of (Nd, Cu) co-doping on the structural, electrical and ferroelectric properties of BiFeO 3 polycrystalline thin film have been studied. Pure and co-doped thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. Significant improvements in the electrical and the ferroelectric properties were observed for the co-doped thin film. The remnant polarization (2 P r ) and the coercive field (2 E c ) of the co-doped thin film were 106 μC/cm 2 and 1032 kV/cm at an applied electric field of 1000 kV/cm, respectively. The improved properties of the co-doped thin film could be attributed to stabilized perovskite structures, reduced oxygen vacancies and modified microstructures.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
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