Ferroelectric yttrium doped hafnium oxide films from all-inorganic aqueous precursor solution
Source abstract
Abstract
Abstract We report a unique aqueous solution deposition method to prepare yttrium doped hafnium oxide (Y:HfO2) thin films using all-inorganic reagents. The composition and chemical bonding features of the films were investigated using X-ray photoelectron spectroscopy. The Y:HfO2 film was integrated into metal-insulator-semiconductor (MIS) structure capacitors for electrical measurements. A transition of the polarization behavior from apparent ferroelectric-type to linear dielectric-type was observed for films with thickness increasing from 25 nm to 80 nm, which is correlated to the dominant crystal structure change from high-symmetry phase to monoclinic phase evidenced by grazing incidence X-ray diffraction analysis.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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