Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors
Source abstract
Abstract
Abstract Amorphous AlZnSnO (AZTO) channel layer thin film transistors (TFTs) with various Al doping ratios were fabricated using a solution process. Electrical, structural, and optical properties were systematically investigated as a function of Al doping. At an appropriate level of Al doping (3.45 at%), optimal electrical properties of AZTO TFTs were obtained, including mobility of 2.41 cm2/V s and a subthreshold swing of 0.68 V/decade. From analyses of the chemical bonding states and optical band structure, this is attributed to suppression of oxygen related defect formation and a decrease of the band gap.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Electrical and Thermal Properties of Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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