Effects of Mn doping on dielectric properties and energy-storage performance of Na0.5Bi0.5TiO3 thick films
Source abstract
Abstract
Abstract Lead-free Na 0.5 Bi 0.5 Ti 1−x Mn x O 3 (NBTMn x , x=0, 0.01, 0.03 and 0.05) ferroelectric thick films have been fabricated on LaNiO 3 /Si(100) substrate by using a polyvinylpyrrolidone-modified sol-gel method and the effects of Mn content on their microstructure, dielectric properties and energy-storage performance were investigated. Compared with the pure Na 0.5 Bi 0.5 TiO 3 (NBT) thick films, NBTMn x thick films exhibited a large enhancement in dielectric properties and energy-storage performance. Particularly, a giant recoverable energy-storage density ( W ) of 30.2 J/cm 3 and the corresponding efficiency ( η ) of 47.7% were obtained in NBTMn 0.01 thick film at 2310 kV/cm. Moreover, the NBTMn 0.01 thick film displayed good energy-storage stability over a large temperature range at different frequency.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Dielectric materials and actuators · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
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