Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties
Source abstract
Abstract
Abstract Copper oxide (CuO x ) films were grown at a relatively low temperature (100 °C) by atomic layer deposition (ALD). Hexafluoroacetyl-acetonateCu(I)(3,3-Dimethyl-1-butene) ((hfac)Cu-(I)(DMB)) and ozone (O 3 ) were used as the copper precursor and oxidant, respectively. It is shown that stable phases of CuO x are obtained through rapid thermal annealing (RTA) in air. After annealing at various temperatures (200–500 °C), different p-type band structures and electron binding information are obtained. X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) studies indicate that the major copper oxidation state changes from 1 + to 2 + during thermal treatment. Thin film transistors (TFTs) incorporating the ALD-grown CuO x semiconductors are evaluated, and an unusually high p-type device performance is observed, with a field effect mobility of 5.6 cm 2 /V s after annealing at 300 °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper-based nanomaterials and applications · ZnO doping and properties · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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