journal article·2022-06

Towards an universal artificial synapse using MXene-PZT based ferroelectric memristor

Miaocheng Zhang, Qi Qin, Xingyu Chen, Runze Tang, Aoze Han, Suhao Yao, Ronghui Dan, Qiang Wang, Yu Wang, Hong Gu, Hao Zhang, Ertao Hu, Lei Wang, Jianguang Xu, Yi Tong

Ceramics International· Volume 48· Issue 11
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Advanced Memory and Neural Computing · MXene and MAX Phase Materials · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (82)

Show source-provided references
1. Fully hardware-implemented memristor convolutional neural network10.1038/s41586-020-1942-4 ↗
2. Power-efficient neural network with artificial dendrites10.1038/s41565-020-0722-5 ↗
3. A system hierarchy for brain-inspired computing10.1038/s41586-020-2782-y ↗
4. Neuromorphic nanoelectronic materials10.1038/s41565-020-0647-z ↗
5. Two-dimensional materials for next-generation computing technologies10.1038/s41565-020-0724-3 ↗
6. The missing memristor found10.1038/nature06932 ↗
7. A low‐current and analog memristor with Ru as mobile species10.1002/adma.201904599 ↗
8. MoS2 memristors exhibiting variable switching characteristics toward biorealistic synaptic emulation10.1021/acsnano.8b03977 ↗
9. Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity10.1007/s40843-020-1444-1 ↗
10. BiFeO3-Based flexible ferroelectric memristors for neuromorphic pattern recognition10.1021/acsaelm.0c00094 ↗
11. Couplings of polarization with interfacial deep trap and Schottky interface controlled ferroelectric memristive switching10.1002/adfm.202000664 ↗
12. Ferroelectric tunnel memristor10.1021/nl302912t ↗
13. Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions10.1063/1.4960523 ↗
14. Effects of porosity on electric fatigue behaviour in PLZT and PZT ferroelectric ceramics
15. A ferroelectric memristor based on the migration of oxygen vacancies10.1039/C6RA08257B ↗
16. Key role of oxygen-vacancy electromigration in the memristive response of ferroelectric devices10.1103/PhysRevApplied.14.044045 ↗
17. Programmable ferroelectric tunnel memristor10.3389/fphy.2014.00007 ↗
18. Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices10.1021/nl500049g ↗
19. A 250 mV Cu/SiO2/W memristor with half-integer quantum conductance states10.1021/acs.nanolett.5b04296 ↗
20. Synaptic plasticity selectively activated by polarization-dependent energy-efficient ion migration in an ultrathin ferroelectric tunnel junction10.1021/acs.nanolett.6b05308 ↗
21. Recent advances in two-dimensional materials beyond graphene10.1021/acsnano.5b05556 ↗
22. Two‐dimensional materials: from mechanical properties to flexible mechanical sensors10.1002/inf2.12072 ↗
23. In situ transmission electron microscopy characterization and manipulation of two-dimensional layered materials beyond graphene10.1002/smll.201604259 ↗
24. Polarization-mediated modulation of electronic and transport properties of hybrid MoS2–BaTiO3–SrRuO3 tunnel junctions10.1021/acs.nanolett.6b04247 ↗
25. Electrical‐polarization‐induced ultrahigh responsivity photodetectors based on graphene and graphene quantum dots10.1002/adfm.201503691 ↗
26. Piezo‐phototronic effect for enhanced flexible MoS2/WSe2 van der Waals photodiodes10.1002/adfm.201802849 ↗
27. Nanodomain engineering for programmable ferroelectric devices10.1021/acs.nanolett.9b00673 ↗
28. Ferroelectric tunnel junctions with graphene electrodes10.1038/ncomms6518 ↗
29. Two-dimensional MXenes: from morphological to optical, electric, and magnetic properties and applications10.1016/j.physrep.2019.12.006 ↗
30. Two-dimensional, ordered, double transition metals carbides (MXenes)10.1021/acsnano.5b03591 ↗
31. The world of two-dimensional carbides and nitrides (MXenes)10.1126/science.abf1581 ↗
32. Phosphorized MXene-phase molybdenum carbide as an earth-abundant hydrogen evolution electrocatalyst10.1021/acsaem.8b01642 ↗
33. Nanoengineering of 2D MXene‐based materials for energy storage applications
34. Resistance switching characteristics and mechanisms of MXene/SiO2 structure-based memristor10.1063/1.5087423 ↗
35. Configurable multi-state non-volatile memory behaviors in Ti3C2 nanosheets10.1039/C9NR00747D ↗
36. Black phosphorus quantum dot/Ti3C2 MXene nanosheet composites for efficient electrochemical lithium/sodium-ion storage10.1002/aenm.201801514 ↗
37. On the organization and thermal behavior of functional groups on Ti3C2 MXene surfaces in vacuum10.1088/2053-1583/aa89cd ↗
38. Surface termination dependent work function and electronic properties of Ti3C2Tx MXene10.1021/acs.chemmater.9b00414 ↗
39. Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing10.1002/aelm.202000309 ↗
40. Photon-memristive system for logic calculation and nonvolatile photonic storage10.1002/adfm.202002945 ↗
41. Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure10.1063/1.4795145 ↗
42. Work function of single-walled and multiwalled carbon nanotubes: first-principles study10.1103/PhysRevB.76.235413 ↗
43. Ferroelectric tunnel junctions for information storage and processing10.1038/ncomms5289 ↗
44. Energy‐efficient organic ferroelectric tunnel junction memristors for neuromorphic computing10.1002/aelm.201800795 ↗
45. Graphene-edge electrode on a Cu-based chalcogenide selector for 3D vertical memristor cells10.1021/acsami.9b11721 ↗
46. Positive effect of an internal depolarization field in ultrathin epitaxial ferroelectric films10.1002/aelm.201500288 ↗
47. In situ observation of voltage‐induced multilevel resistive switching in solid electrolyte memory10.1002/adma.201100507 ↗
48. Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory10.1002/adma.201603293 ↗
49. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
50. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
51. A climbing image nudged elastic band method for finding saddle points and minimum energy paths10.1063/1.1329672 ↗
52. Surface functionalization of single-layered Ti3C2Tx MXene and its application in multilevel resistive memory10.1021/acsami.9b16979 ↗
53. Multilayer-structured transparent MXene/PVDF film with excellent dielectric and energy storage performance10.1039/C9TC02715G ↗
54. MXetronics: MXene-enabled electronic and photonic devices10.1021/acsmaterialslett.9b00419 ↗
55. Covalent surface modifications and superconductivity of two-dimensional metal carbide MXenes10.1126/science.aba8311 ↗
56. MXene-enhanced β-phase crystallization in ferroelectric porous composites for highly-sensitive dynamic force sensors10.1016/j.nanoen.2021.106409 ↗
57. Resistive switching behavior in memristors with TiO2 nanorod arrays of different dimensions10.1016/j.apsusc.2019.04.119 ↗
58. Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor10.1016/j.spmi.2016.11.043 ↗
59. Temperature dependence of the resistance of metallic nanowires of diameter⩾ 15 nm: applicability of Bloch-Grüneisen theorem
60. Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors10.1002/adma.201805284 ↗
61. Synaptic plasticity and metaplasticity of biological synapse realized in a knbo3 memristor for application to artificial synapse10.1021/acsami.8b04550 ↗
62. The molecular biology of memory storage: a dialogue between genes and synapses10.1126/science.1067020 ↗
63. Epitaxial ferroelectric Hf0.5Zr0.5O2 thin films and their implementations in memristors for brain‐inspired computing10.1002/adfm.201806037 ↗
64. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory10.1021/nl803387q ↗
65. Memristor with Ag-Cluster-Doped TiO2 films as artificial synapse for neuroinspired computing10.1002/adfm.201705320 ↗
66. Short-term memory to long-term memory transition in a nanoscale memristor10.1021/nn202983n ↗
67. Short-term plasticity and long-term potentiation in artificial biosynapses with diffusive dynamics10.1021/acsnano.7b08331 ↗
68. Emulation of multiple-functional synapses using V2C memristors with coexistence of resistive and threshold switching10.1016/j.mssp.2021.106123 ↗
69. Novel designs of spiking neuron circuit and STDP learning circuit based on memristor10.1016/j.neucom.2018.06.062 ↗
70. Formation of new MXene film using spinning coating method with DMSO solution and its application in advanced memristive device10.1016/j.ceramint.2019.06.202 ↗
71. Ferroelectric memristors based hardware of brain functions for future artificial intelligence
72. Sub-nanosecond memristor based on ferroelectric tunnel junction
73. Ferroelectric memristor based on Hf0.5Zr0.5O2 thin film combining memristive and neuromorphic functionalities10.1002/pssr.202000224 ↗
74. Configurable resistive response in BaTiO3 ferroelectric memristors via electron beam radiation10.1002/adma.201907541 ↗
75. One transistor–two memristor based on amorphous indium–gallium–zinc-oxide for neuromorphic synaptic devices10.1021/acsaelm.0c00499 ↗
76. A pure 2H‐MoS2 nanosheet‐based memristor with low power consumption and linear multilevel storage for artificial synapse emulator10.1002/aelm.201901342 ↗
77. Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing10.1016/j.ceramint.2021.07.257 ↗
78. MLP+ NeuroSimV3. 0: improving on-chip learning performance with device to algorithm optimizations
79. NeuroSim+: an integrated device-to-algorithm framework for benchmarking synaptic devices and array architectures
80. Partition SRAM and RRAM based synaptic arrays for neuro-inspired computing
81. In situ reduced MXene/AuNPs composite toward enhanced charging/discharging and specific capacitance10.1007/s40145-021-0491-0 ↗
82. The oxidation and thermal stability of two-dimensional transition metal carbides and/or carbonitrides (MXenes) and the improvement based on their surface state10.1039/D1QI00041A ↗