journal article·2022-05

Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C

Hyeong Jin Park, Taikyu Kim, Min Jae Kim, Hojae Lee, Jun Hyung Lim, Jae Kyeong Jeong

Ceramics International· Volume 48· Issue 9
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (26)

Show source-provided references
1. Present status of amorphous In-Ga-Zn-O thin-film transistors
2. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
3. Oxide semiconductor thin-film transistors: a review of recent advances10.1002/adma.201103228 ↗
4. Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors10.1016/j.matchemphys.2011.10.013 ↗
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous transistors using amorphous oxide semiconductors10.1038/nature03090 ↗
6. High thermal stability, high tensile strength, and good water barrier property of terpolyester containing biobased monomer for next-generation smart film application: synthesis and characterization10.3390/polym12112458 ↗
7. A review of coating materials used to improve the performance of optical fiber Sensors10.3390/s20154215 ↗
8. Molecular insights into sequence distributions and conformation-dependent properties of high-phenyl polysiloxanes10.3390/polym11121989 ↗
9. Defects in amorphous semiconductors: the case of amorphous indium gallium zinc oxide10.1103/PhysRevApplied.9.054039 ↗
10. Origin of subgap states in amorphous In-Ga-Zn-O10.1063/1.4826895 ↗
11. Impact of bias stability for crystalline InZnO thin-film transistors10.1063/1.4985295 ↗
12. Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors10.1063/1.4947063 ↗
13. The mobility enhancement of indium gallium zinc oxide transistors via low-temperature crystallization using a tantalum catalytic layer10.1038/s41598-017-11461-0 ↗
14. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance10.7567/JJAP.55.035504 ↗
15. The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin-films
16. Polycrystalline indium gallium tin oxide thin-film transistors with high mobility exceeding 100 cm2/Vs10.1109/LED.2021.3055940 ↗
17. Physical properties of In2O3 thin-films prepared at various oxygen partial pressures10.1016/j.jallcom.2009.01.003 ↗
18. Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization10.1038/s41598-020-76046-w ↗
19. Oxygen vacancy-induced microstructural changes of annealed CeO2-x nano crystals10.1002/jrs.2987 ↗
20. Transparent conducting indium oxide thin-films grown by low-temperature metal organic chemical vapor deposition10.1016/j.tsf.2006.08.030 ↗
21. Optical properties of rf reactive sputtered tin-doped In2O3 films10.1016/0040-6090(79)90298-0 ↗
22. Phase stability, electronic structure, and optical properties of indium oxide polytypes10.1103/PhysRevB.76.075129 ↗
23. Large-area, ultrathin metal-oxide semiconductor nanoribbon arrays fabricated by chemical lift-off lithography10.1021/acs.nanolett.8b02054 ↗
24. High performance solution-processed indium oxide thin-film transistors10.1021/ja804262z ↗
25. Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors10.1063/1.4960200 ↗
26. The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin-film transistors under illumination10.1149/1.3481710 ↗