Structure and dielectric properties of barium titanate thin films for capacitor applications

Abstract BaTiO 3 is a typical ferroelectric material with high relative permittivity and has been used for various applications, such as multilayer ceramic capacitors (MLCCs). With the tendency of miniaturization of MLCCs, the thin films of BaTiO 3 have been required. In this work, BaTiO 3 thin films have been deposited on Pt-coated Si substrates by RF magnetron sputtering under different deposition conditions. The films deposited at the substrate temperature from 550 °C–750 °C show a pure tetragonal perovskite structure. The films deposited at 550 °C–625 °C exhibit (111) preferential orientation, and change to (110) preferential orientation when deposited above 650 °C. The film morphologies vary with working pressure and substrate temperature. The film deposited at 625 °C and 4.5 Pa has the relative permittivity of 630 and the loss tangent of 2% at 10 kHz.