Recent progress in synthesis, growth mechanisms, properties, and applications of silicon nitride nanowires
Source abstract
Abstract
Abstract With advances in nanotechnology, nanowires have gained worldwide attention because of their novel properties and promising applications. Among them, silicon nitride (Si3N4) nanowires have attracted increasing attention due to their excellent performance and huge application potential. In this review, various synthesis methods of Si3N4 nanowires are introduced in detail, and then the growth mechanisms are also stated. Subsequently, the novel properties of Si3N4 nanowires including mechanical, optical, electrical, thermal, and wetting performance are highlighted. Applications corresponding to performance are also summarized later, such as composites, field emitters, field-effect transistors (FETs), photodetectors, photocatalysts, and microwave absorbers. Finally, the contents of this article are concluded and outlooks of future research directions are stated. This article reviews the recent advances and provides the prospects and challenges of Si3N4 nanowires.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · MXene and MAX Phase Materials · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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