A review on transition metal doped silicon carbide

Abstract Silicon carbide (SiC) is one of the versatile ceramic materials renowned for its several polytypes, variable properties and growth challenges. Its copious routes for synthesis, applications in hostile conditions and exceptional mechanical, transport, optoelectronics, and electrochemical properties make it an exclusive choice among the contemporary compounds. Unmapped application potential and undiscovered characteristics of SiC are still unresolved challenges being faced by the researchers since several centuries. Owing to its structural diversity, SiC is a resourceful matrix to produce micromixers, alloys, new phases and compounds when modified with host atoms. The doping of SiC with transition metals (TM) appears to modify the material properties and opens the gateway to a number of applications which are otherwise inaccessible. In order to have a comprehensive look into modification in properties of SiC by transition metals (TM) for various human needs and device grade applications a comprehensive literature is being reported. This review is aimed at providing a wide-ranging overview of the research efforts reported on doping effects of TM doped SiC and applications in various fields. The applicability of the doped material as diluted magnetic semiconductor in spintronics and as a catalyst in hydrogen gas sensor, electronic devices, microwave frequency and electrochemical energy devices is discussed in detail.