Fully solution-processed metal oxide thin-film transistors via a low-temperature aqueous route
Source abstract
Abstract
Abstract We report a facile and low-temperature aqueous route for the fabrication of various oxide thin films (Al 2 O 3 , In 2 O 3 and InZnO). A detail study is carried out to reveal the formation and properties of these sol-gel-derived thin films. The results show that the water-based oxide thin films undergo the decomposition of nitrate group as well as conversion of metal hydroxides to form metal oxide framework. High quality oxide thin film could be achieved at low temperature by this aqueous route. Furthermore, these oxide thin films are integrated to form thin-film transistors (TFTs) and the electrical performance is systematically studied. In particular, we successfully demonstrate In 2 O 3 /Al 2 O 3 TFTs with high mobility of 30.88 cm 2 V −1 s −1 and low operation voltage of 4 V at a maximum processing temperature of 250 °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
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