Conductive LaNiO₃ Electrode Grown by Pulsed Laser Ablation on Si Substrate

Using the pulsed laser ablation (PLA) technique, conductive LaNiO₃ thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO₃ films display a metallic character. Polycrystalline PbTiO₃films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO₃ electrodes. Ferroelectricity measurements of the PbTiO₃/LaNiO₃ heterostructure prove LaNiO₃ to be a promising electrode material in the integration of ferroelectrics and Si wafer.