Recent Advances of Quantum Conductance in Memristors

Abstract Memristors with the filamentary switching mechanism have been acknowledged as a leading candidate for next‐generation nonvolatile memory applications, primarily due to their excellent downscaling potential, fast operation speed, low power consumption, and high switching endurance. In particular, room‐temperature quantum conductance effect can emerge as the size of the conducting filaments is reduced down to atomic scale, offering great opportunities for the physical understanding of memristive switching phenomena and the realization of ultrahigh‐density storage, logic‐in‐memory circuits, atomic scale photodetectors, and etc. This review presents a timely and comprehensive summary of the recent advances in quantum conductance in memristors. After a brief description on the evolution dynamics of conducting filaments, the experimental phenomena, theoretical understanding, effective control, and promising applications of quantum conductance in memristors are summarized and discussed in detail. Finally, current challenges and future prospects concerning quantum conductance in memristors are presented.