journal article·2025-04Open access

Molybdenum-sulfide-based optoelectronic device for multivalued logic

Kang’an Jiang, Yuhong Cao, Dehui Huang, Zhiyan Zheng, Zhuyikang Zhao, Su Hu, Heyu Shen, Hui Wang

Cell Reports Physical Science· Volume 6· Issue 4

Abstract

Multivalued logic (MVL) technology has great potential in the exploration of breaking through the traditional von Neumann architecture. Compared with the binary logic system, MVL can effectively reduce the complexity of the system and improve the integration density of devices to process larger amounts of data. Recently, some preliminary studies have been conducted on negative differential resistance (NDR) effect devices, which can be applied to ternary logic processing based on their nonlinear response characteristics of current and voltage. In this study, the type III heterojunction formed by MoS 2-X O X and TiO X is used to achieve the NDR effect, and we analyze its potential in ternary logic processing. Then, utilizing the photosensitive characteristics of the structure, a laser is introduced to regulate the effect so that the device additionally presents quaternary/binary logic under low/high bias. Finally, we achieve the processing of binary/ternary/quaternary logic on a single device through different modulation methods. This work provides effective ideas and directions for the development of MVL technology.
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Research context

OpenAlex topics: Molecular Junctions and Nanostructures · Advancements in Semiconductor Devices and Circuit Design · Advanced Memory and Neural Computing

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References (55)

Show source-provided references
1. Cramming more components onto integrated circuits10.1109/JPROC.1998.658762 ↗
2. Progress in digital integrated electronics. 1975 International Electron Devices Meeting
3. Machine learning for semiconductors10.1016/j.chip.2022.100033 ↗
4. Circuits and devices for standalone large-scale integration (LSI) chips and Internet of Things (IoT) applications: a review10.1016/j.chip.2023.100048 ↗
5. The chips are down for Moore's law10.1038/530144a ↗
6. Wafer-scale synthesis of two-dimensional materials for integrated electronics10.1016/j.chip.2023.100080 ↗
7. Recent Advances on Multivalued Logic Gates: A Materials Perspective
8. Multiple-Valued Logic—its Status and its Future10.1109/TC.1984.1676392 ↗
9. The Prospects for Multivalued Logic: A Technology and Applications View10.1109/TC.1981.1675860 ↗
10. Looking Beyond 0 and 1: Principles and Technology of Multi-Valued Logic Devices10.1002/adma.202108830 ↗
11. Robust and energy-efficient carbon nanotube FET-based MVL gates: A novel design approach10.1016/j.mejo.2015.09.018 ↗
12. Multiple-Valued Logic: An Implementation10.1117/12.7973775 ↗
13. Verilog HDL Simulator Technology: A Survey
14. Controllable potential barrier for multiple negative-differential-transconductance and its application to multi-valued logic computing10.1038/s41699-021-00213-4 ↗
15. Quaternary NAND Logic and Complementary Ternary Inverter with p-MoTe2/n-MoS2 Heterostack Channel Transistors
16. Introduction to a General Theory of Elementary Propositions10.2307/2370324 ↗
17. Logic circuits based on ternary parametrons10.1007/BF01038476 ↗
18. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic10.1038/ncomms13413 ↗
19. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures10.1038/ncomms8311 ↗
20. Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface10.1021/acsnano.9b03342 ↗
21. Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
22. Visualizing atomic-scale negative differential resistance in bilayer graphene
23. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure10.1038/s41928-019-0364-5 ↗
24. Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment10.1021/acs.nanolett.5b01792 ↗
25. ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors10.1038/s41467-019-09998-x ↗
26. Engineering Atomic-Scale Patterning and Resistive Switching in 2D Crystals and Application in Image Processing10.1002/adma.202306850 ↗
27. Ferroelectric memristor and its neuromorphic computing applications
28. Multistability of a coherent spin ensemble in a semiconductor microcavity10.1038/nmat2787 ↗
29. Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS210.1002/aelm.201800863 ↗
30. P-type conduction in two-dimensional MoS2 via oxygen incorporation10.1063/1.4983092 ↗
31. Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation10.1021/acsnano.5b06529 ↗
32. Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution10.1021/nl503251h ↗
33. Nanocrystalline TiO2 studied by optical, FTIR and X-ray photoelectron spectroscopy: correlation to presence of surface states10.1016/S0040-6090(99)00722-1 ↗
34. SEM, Scanning Auger and XPS characterization of chemically pretreated Ti surfaces intended for biomedical applications10.1016/j.matchemphys.2007.02.088 ↗
35. Mechanism in Nb doped titania oxygen gas sensor10.1016/S0925-4005(98)00111-7 ↗
36. X-ray photoelectron spectroscopy of thermally treated TiO2 thin films10.1016/0169-4332(93)90229-5 ↗
37. Carrier-recirculating broadband photodetector with high gain based on van der Waals In2Se3/MoS2 heterostructure10.1016/j.apsusc.2023.159135 ↗
38. Self-Powered Programmable van der Waals Photodetectors with Nonvolatile Semifloating Gate10.1021/acs.nanolett.3c03500 ↗
39. Large on-off ratios and negative differential resistance in a molecular electronic device10.1126/science.286.5444.1550 ↗
40. Oxide Semiconductor Heterojunction Transistor with Negative Differential Transconductance for Multivalued Logic Circuits10.1021/acsnano.3c09168 ↗
41. Negative Differential Resistance Devices and Circuits
42. Room-Temperature Negative Differential Resistance in Surface-Supported Metal-Organic Framework Vertical Heterojunctions10.1002/smll.202101475 ↗
43. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures10.1126/science.1218461 ↗
44. Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors10.1021/nn507278b ↗
45. A Van Der Waals Reconfigurable Multi-Valued Logic Device and Circuit Based on Tunable Negative-Differential-Resistance Phenomenon
46. Multi-Valued Logic Circuits Based on Organic Anti-ambipolar Transistors10.1021/acs.nanolett.8b01357 ↗
47. Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application10.1021/acs.nanolett.5b04791 ↗
48. Light-Enhanced Negative Differential Resistance and Multi-Level Resistive Switching in Glutamine-Functionalized MoS2 Quantum Dots for Resistive Random-Access Memory Devices
49. Active pixel sensor matrix based on monolayer MoS2 phototransistor array10.1038/s41563-022-01398-9 ↗
50. High-Performance Photoelectrochemical-Type Self-Powered UV Photodetector Using Epitaxial TiO2/SnO2Branched Heterojunction Nanostructure10.1002/smll.201202408 ↗
51. Schottky Junction Made from a Nanoporous Au and TiO2 Film for Plasmonic Photodetectors10.1021/acsanm.3c00093 ↗
52. Timing of Synaptic Transmission10.1146/annurev.physiol.61.1.521 ↗
53. The action potential in mammalian central neurons10.1038/nrn2148 ↗
54. Stages of processing in face perception: an MEG study10.1038/nn909 ↗
55. Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device10.1002/adma.202308090 ↗