Large Magnetoresistance and 15 Boolean Logic Functions Based on a ZnCoO Film and Diode Combined Device

Abstract Magnetoresistance (MR) effects not only have great applications in magnetic sensors, hard disk drive (HDD) read heads, and magnetic random access memory (MRAM), but also are expected to develop next‐generation computing systems. Recently, the MR ratio is found to be significantly increased in diode‐enhanced MR (DEMR) devices by coupling the Hall effect or anomalous Hall effect of magnetic materials and the nonlinear transport property of diodes. However, these devices cannot satisfy the requirement of high sensitivity at low magnetic field and small working current simultaneously. Here, large MR ratio (−6850% at 6 T) and high magnetic‐field sensitivity (−875% at 0.04 T) with small working current (<0.5 mA) are achieved at room temperature by combining ZnCoO film and diode. A theoretical model is established quantitatively, which can well explain the experimental observations and be used for evaluating the device performance. Based on this combined device, a logic unit with magnetoelectric symmetry is constructed by introducing a magnet as control bit. Through manipulating the control bit and tuning the working current, 15 Boolean logic functions can be carried out. This work will be beneficial for extending the functionality of spintronic logic‐in‐memory devices and provide a promising solution for realizing emerging computing systems.