journal article·2020-10Open access

Resistive Switching in Individual Co/ZnO Core/Shell Nanoparticles Formed via Inert Gas Condensation and Selective Oxidation

Zahra Ahmadi, Haidong Lu, Pinaki Mukherjee, Mark Koten, Alexei Gruverman, Jeffrey E. Shield

Advanced Electronic Materials· Volume 6· Issue 10

Abstract

Abstract Magnetron sputtering inert gas condensation is used to produce core/shell Co/ZnO nanoparticles. Selective oxidation to form the core/shell nanoparticles is accomplished both during nanoparticle formation (“in situ”) and with exposure to ambient conditions (“ex situ”). The ZnO formed in situ shows single‐crystalline nature with specific orientation relationships with the Co core, while the ZnO formed ex situ is polycrystalline. Conductive atomic force microscopy is utilized to measure the electrical behavior of individual nanoparticles, and both types of core/shell nanoparticles display classic bipolar resistive switching behavior. These results highlight potential application of these nanoparticles as promising next generation nonvolatile memories and neuromorphic computational devices.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Mechanical and Materials Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA

Department of Physics and Astronomy University of Nebraska‐Lincoln Lincoln NE 68588 USA

Materials Science and Engineering Michigan Technological University Houghton MI 49931 USA

Funding

National Science Foundation

References (74)

Show source-provided references
1. 10.1063/1.471919810.1063/1.4719198 ↗
2. 10.1021/nn204809a10.1021/nn204809a ↗
3. 10.1063/1.296614110.1063/1.2966141 ↗
4. 10.1021/nl803387q10.1021/nl803387q ↗
5. 10.1063/1.183156010.1063/1.1831560 ↗
6. 10.1103/PhysRevB.81.11510110.1103/PhysRevB.81.115101 ↗
7. 10.1002/adma.20070208110.1002/adma.200702081 ↗
8. 10.1063/1.317381310.1063/1.3173813 ↗
9. 10.1103/PhysRevLett.102.02680110.1103/PhysRevLett.102.026801 ↗
10. 10.1063/1.310808810.1063/1.3108088 ↗
11. 10.1063/1.196841610.1063/1.1968416 ↗
12. 10.1038/nnano.2008.16010.1038/nnano.2008.160 ↗
13. 10.1143/JJAP.47.626610.1143/JJAP.47.6266 ↗
14. 10.1063/1.298242610.1063/1.2982426 ↗
15. 10.1143/JJAP.46.L5710.1143/JJAP.46.L57 ↗
16. 10.1002/smll.20150210010.1002/smll.201502100 ↗
17. 10.1126/sciadv.aaw843810.1126/sciadv.aaw8438 ↗
18. 10.1088/0957-4484/24/38/38401110.1088/0957-4484/24/38/384011 ↗
19. 10.1039/C8FD00109J10.1039/C8FD00109J ↗
20. 10.1038/s41427-018-0105-710.1038/s41427-018-0105-7 ↗
21. 10.1039/C5NR07004J10.1039/C5NR07004J ↗
22. 10.1039/c1nr11000d10.1039/c1nr11000d ↗
23. 10.1021/cr100449n10.1021/cr100449n ↗
24. 10.3762/bjnano.6.8910.3762/bjnano.6.89 ↗
25. 10.1016/j.cap.2012.06.02510.1016/j.cap.2012.06.025 ↗
26. 10.2298/PAC1302045S10.2298/PAC1302045S ↗
27. 10.1039/c4cc02410a10.1039/c4cc02410a ↗
28. 10.1016/j.matlet.2006.04.06410.1016/j.matlet.2006.04.064 ↗
29. 10.1088/2053-1591/aadc8210.1088/2053-1591/aadc82 ↗
30. 10.1021/acsapm.8b0024010.1021/acsapm.8b00240 ↗
31. 10.1039/C6RA15799H10.1039/C6RA15799H ↗
32. 10.1088/1742-6596/741/1/01211910.1088/1742-6596/741/1/012119 ↗
33. 10.1002/adma.20150303910.1002/adma.201503039 ↗
34. 10.1155/2015/45018310.1155/2015/450183 ↗
35. 10.1007/s11090-015-9640-y10.1007/s11090-015-9640-y ↗
36. 10.1038/ncomms361810.1038/ncomms3618 ↗
37. 10.1063/1.115015910.1063/1.1150159 ↗
38. 10.1063/1.369759910.1063/1.3697599 ↗
39. 10.1103/PhysRevLett.45.82110.1103/PhysRevLett.45.821 ↗
40. 10.1038/ncomms1276710.1038/ncomms12767 ↗
41. 10.1021/la302213410.1021/la3022134 ↗
42. 10.3390/ma1215236610.3390/ma12152366 ↗
43. 10.1039/C4NR02913E10.1039/C4NR02913E ↗
44. 10.1039/C5CC00774G10.1039/C5CC00774G ↗
45. 10.1039/C3NR06114K10.1039/C3NR06114K ↗
46. 10.1016/j.matchemphys.2014.11.06610.1016/j.matchemphys.2014.11.066 ↗
47. 10.1002/advs.20190044710.1002/advs.201900447 ↗
48. 10.1021/acs.chemmater.9b0012910.1021/acs.chemmater.9b00129 ↗
49. 10.1063/1.363577510.1063/1.3635775 ↗
50. 10.1039/C5NR08256K10.1039/C5NR08256K ↗
51. 10.1002/ppsc.20150001910.1002/ppsc.201500019 ↗
52. 10.1063/1.481141210.1063/1.4811412 ↗
53. 10.1016/S1002-0071(12)60001-X10.1016/S1002-0071(12)60001-X ↗
54. 10.1063/1.327332910.1063/1.3273329 ↗
55. 10.1116/1.57785310.1116/1.577853 ↗
56. 10.1016/S0039-6028(98)00363-X10.1016/S0039-6028(98)00363-X ↗
57. 10.1007/s11051-013-1638-x10.1007/s11051-013-1638-x ↗
58. 10.1021/jp409015y10.1021/jp409015y ↗
59. 10.1201/978143988357010.1201/9781439883570 ↗
60. Kim Y.‐M. · J. Korean Phys. Soc. · 2006 · 48 · 250
61. 10.1021/nl904290610.1021/nl9042906 ↗
62. 10.3788/COL201210.01310210.3788/COL201210.013102 ↗
63. 10.1002/adma.20120159510.1002/adma.201201595 ↗
64. 10.1143/JJAP.49.10000110.1143/JJAP.49.100001 ↗
65. 10.1021/nl900006g10.1021/nl900006g ↗
66. 10.3390/nano601001610.3390/nano6010016 ↗
67. 10.1063/1.493820910.1063/1.4938209 ↗
68. 10.1038/s41598-016-0001-810.1038/s41598-016-0001-8 ↗
69. 10.1002/adma.20160297610.1002/adma.201602976 ↗
70. 10.1016/j.mssp.2018.06.01610.1016/j.mssp.2018.06.016 ↗
71. 10.1016/j.jallcom.2015.01.11710.1016/j.jallcom.2015.01.117 ↗
72. 10.1063/1.274984610.1063/1.2749846 ↗
73. 10.1063/1.283266010.1063/1.2832660 ↗
74. 10.1016/j.mee.2011.02.05810.1016/j.mee.2011.02.058 ↗