Investigation on Laser-annealing and Subsequent Laser-nanotexturing of Amorphous Silicon (a-Si) Films for Photovoltaic Application

3+ :YAG laser is reported. The technique involved is laser annealing and subsequent laser nano texturing by over lapping the laser spot by 50% and 90% of the diameter. Experimental investigations were per- formed using third (355 nm), second (532 nm) and fundamental harmonics (1064 nm) of the pulsed Nd 3+ :YAG laser. To investigate the texturization AFM measurement was performed. Absorbance and photoconductivity measurements were performed to analyze the photovoltaic properties of thin films. The process was theoretically analyzed using a 3-D heat transformation model in FEMLAB software. 355 nm laser assisted nano-texturing with 90% overlap showed an improvement in crys- talline property and improved textured surface with a higher absorbance as compared to that of 50% overlap.