Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

Abstract To achieve the highest integration density, a one‐selector one‐resistor (1S1R) structure is essential because of its smallest feature size in crossbar arrays. However, the complexity of structure and poor stability of the 1S1R property has seriously hampered its development. A multi‐functional controllable device with simple Pt/NbO_x/TiN structure is fabricated and exhibits excellent 1S1R characteristics and threshold switching properties, which is suitable for integration due to the reduced leakage current. Meanwhile, two modes of 1S1R characteristics are found and discussed in detail, which is beneficial to understand the degeneration of 1S1R property. Furthermore, finite element analysis is utilized to analyze and provide further support for the multi‐behaviors. A multi‐functional device is demonstrated and the multi‐behavior mechanisms are explained, which is helpful to promote the application of 3D storage technology.