Growth of dense single-walled carbon nanotubes in nano-sized silicon dioxide holes for future microelectronics

Dense and aligned single-walled carbon nanotubes (SWCNTs) were synthesised in nano-sized silicon dioxide holes patterned using electron beam lithography for microelectronics applications. Carbon nanotubes are new materials with potential uses for interconnects and field effect transistors (FETs) of LSI. As single-walled carbon nanotubes have lower resistance than multi-walled carbon nanotubes in close-packed arrangements and show both metallic and semiconducting behaviour, there is a great deal of interest in using dense SWCNTs for low resistive interconnects and high current transistors. Here, we report not only a method for fabrication of SWCNTs in nano-sized holes, but also differences in growth rate and Raman spectroscopy of CNTs in holes of various sizes. The growth rate of CNTs in the holes decreased as the hole size was reduced, due to the amount of carbon radicals diffusing to the catalyst particles at the bottom of the holes.