DataVXAdvanced Electronic MaterialsPaper
journal article·2016-06Open access

MOS2 Impurities: Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals (Adv. Electron. Mater. 6/2016)

Alessandro Molle, Filippo Fabbri, Davide Campi, Alessio Lamperti, Enzo Rotunno, Eugenio Cinquanta, Laura Lazzarini, Daniel Kaplan, Venkataraman Swaminathan, Marco Bernasconi, Massimo Longo, Giancarlo Salviati

Advanced Electronic Materials· Volume 2· Issue 6
Publisher pageOpen full text
Source abstract

Abstract

Charged impurities in MoS2 multilayer crystals can have deep implications in the overall electronic properties. In article number 1600091, Molle and co-workers report on the incorporation of native Cs impurities into divacancy complexes of the MoS2 structure. These defects may determine localization effects in the electronic conduction of the multilayer MoS2 that are reflected in the observation of a variable range hopping transport and a metal-insulator transition.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

CNR‐IMM Laboratorio MDM via C. Olivetti 2 20864 Agrate Brianza Italy

IMEM‐CNR Parco Area delle Scienze 37a 43124 Parma Italy

Dipartimento di Scienza dei Materiali Università degli Studi di Milano Bicocca via, R. Cozzi 55 20125 Milano Italy

U.S. Army RDECOM‐ARDEC Fuze Precision Armaments and Technology Directorate Picatinny Arsenal NJ 07806 USA

References

Reference metadata was not supplied for this record.