A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer
Source abstract
Abstract
Abstract We demonstrate a field-effect nonvolatile random access memory (NVRAM) device made of a graphene nanoribbon (GNR) and a multiferroic epitaxial BiFeO 3 thin film. The GNR and the source/drain electrodes were formed by position-controlled dip-pen nanolithography. The NVRAM device exhibited asymmetric hysteresis behavior originating from the combination of the p -type semiconducting behavior of the GNR and the ferroelectric hysteresis of the BiFeO 3 layer. The memory window of the NVRAM device was significantly improved by a NH 3 annealing process which changed the p -type GNR to n -type.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Multiferroics and related materials · Graphene research and applications · Metamaterials and Metasurfaces Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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