Charge transfer enabled by the p-doping of WSe 2 for 2D material-based printable electronics
Source abstract
Abstract
Here, we report the fabrication of high-performance printable WSe2 transistors via the doping of p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based printable electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
Funding
Ministry of Science · National Research Foundation, funded by the Korean government · Samsung Display Corporation
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