journal article·2021-10-02Open access

Recent progress on metal halide perovskite field-effect transistors

Huihui Zhu, Ao Liu, Yong-Young Noh

Journal of Information Display· Volume 22· Issue 4

Abstract

Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea

Funding

UDC Pioneering Technology Award · Ministry of Science and ICT of Korea through the National Research Foundation

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