A charge integrator sensing circuit for real-time external compensation regardless of threshold voltages of organic light emitting diodes
Source abstract
Abstract
This paper proposed a novel sensing circuit using a charge integrator (CI) to compensate for the thin-film transistors (TFTs) in organic light-emitting diode (OLED) displays. A higher CI initialization voltage is commonly preferred for sensing various TFT characteristics, but this may turn on OLED with a low threshold voltage. The proposed sensing circuit separates the initialization voltages for the TFT and the CI, allowing accurate TFT current sensing regardless of OLED characteristics. The suggested method calculates the threshold voltage (VTH) and the transconductance parameter (K) of TFT using currents sensed at two gate–source voltages (VGSs) for compensation. Real-time compensation is achieved by performing sensing within vertical blanking time. We simulated compensation performance under ΔVTH and ΔK variations of ±0.5 V and ±10%, which demonstrated the current deviation decreased from a maximum of 70.20% to 1.07%. We then fabricated an 11-inch active-matrix OLED (AMOLED) panel to verify the compensation performance. The measurement results revealed that the current deviation decreased from a maximum of 38.11% to 2.55%. The compensation performance was successfully demonstrated with an 11-inch AMOLED panel. The proposed sensing circuit allows CI to be used regardless of OLED characteristics, making it suitable for a wider range of display applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Analytical Chemistry and Sensors · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Kyung Hee University
References (35)
Show source-provided references
1. 10.1080/15980316.2022.203583510.1080/15980316.2022.2035835 ↗
2. C. H. Oh H. J. Shin W. J. Nam B. C. Ahn S. Y. Cha and S. D. Yeo in SID Symp. Dig. Tech. Pap. 2013 44 1 pp. 239-242.10.1002/j.2168-0159.2013.tb06189.x ↗
3. 10.1080/15980316.2020.172083510.1080/15980316.2020.1720835 ↗
4. 10.1063/1.9879910.1063/1.98799 ↗
5. 10.1109/16.91822710.1109/16.918227 ↗
6. 10.1109/JSSC.2004.82937310.1109/JSSC.2004.829373 ↗
7. 10.1002/jsid.64610.1002/jsid.646 ↗
8. D.-U. Jin J.-S. Lee T.-W. Kim S.-G. An D. Straykhilev Y.-S. Pyo H.-S. Kim D.-B. Lee Y.-G. Mo and H.-D. Kim in SID Symp. Dig. Tech. Pap. San Antonio TX USA 2009 40 1 pp. 983-985.10.1889/1.3256964 ↗
9. H. Yamaguchi T. Ueda K. Miura N. Saito S. Nakano T. Sakano K. Sugi I. Amemiya M. Hiramatsu and A. Ishida in SID Symp. Dig. Tech. Pap. Boston MA USA 2012 43 1 pp. 1002-1005.10.1002/j.2168-0159.2012.tb05961.x ↗
10. 10.1889/JSID19.1.1610.1889/JSID19.1.16 ↗
11. 10.1109/LED.2007.90985410.1109/LED.2007.909854 ↗
12. D. W. Park C. K. Kang Y. Park B. Chung K. H. Chung B. H. Kim and S. S. Kim in SID Symp. Dig. Tech. Pap. Seattle IL USA 2010 41 1 pp. 806-809.10.1889/1.3500595 ↗
13. 10.1109/JSSC.2018.288192210.1109/JSSC.2018.2881922 ↗
14. T. Hasumi S. Takasugi K. Kanoh and Y. Kobayashi in SID Symp. Dig. Tech. Pap. San Francisco CA USA 2006 37 1 pp. 1547-1550.10.1889/1.2433290 ↗
15. [15] J.-S. Yoon S.-J. Hong J.-H. Kim D.-H. Kim T. Ryosuke W.-J. Nam B.-C. Song J.-M. Kim P.-Y. Kim and K.-H. Park in SID Symp. Dig. Tech. Pap. San Diego CA USA 2014 45 1 pp. 849-852.10.1002/j.2168-0159.2014.tb00224.x ↗
16. 10.1109/TED.2021.307923210.1109/TED.2021.3079232 ↗
17. 10.1109/TED.2010.206775010.1109/TED.2010.2067750 ↗
18. 10.1109/LED.2009.201488510.1109/LED.2009.2014885 ↗
19. 10.1002/jsid.61610.1002/jsid.616 ↗
20. R. Tani J.-S. Yoon S.-I. Yun W.-J. Nam S. Takasugi J.-M. Kim J.-K. Park S.-Y. Kwon P.-Y. Kim and C.-H. Oh in SID Symp. Dig. Tech. Pap. San Jose CA USA 2015 46 1 pp. 950-953.10.1002/sdtp.10423 ↗
21. [21] H.-J. Shin S. Takasugi K.-M. Park S.-H. Choi Y.-S. Jeong B.-C. Song H.-S. Kim C.-H. Oh and B.-C. Ahn in SID Symp. Dig. Tech. Pap. San Jose CA USA 2015 46 1 pp. 53-56.10.1002/sdtp.10225 ↗
22. H.-J. Shin S. Takasugi K.-M. Park S.-H. Choi Y. S. Jeong H.-S. Kim C.-H. Oh and B.-C. Ahn in SID Symp. Dig. Tech. Pap. San Diego CA USA 2014 45 1 pp. 720-723.10.1002/j.2168-0159.2014.tb00189.x ↗
23. T.-G. Kim S.-T. Kim S.-H. Yu K.-D. Woo W.-S. Ha B.-S. Kim and B.-C. Ahn in SID Symp. Dig. Tech. Pap. San Diego CA USA 2014 45 1 pp. 728-731.10.1002/j.2168-0159.2014.tb00191.x ↗
24. J. Fu T. Hwang P. Liang Y. Zeng P. Lu M. Jou and L. Wang in SID Symp. Dig. Tech. Pap. Los Angeles CA USA 2017 48 1 pp. 204-206.10.1002/sdtp.11654 ↗
25. 10.1109/JEDS.2021.305834810.1109/JEDS.2021.3058348 ↗
26. 10.1002/jsid.44210.1002/jsid.442 ↗
27. Y.-F. Jin and H.-J. Xie SID Symp. Dig. Tech. Pap. Los Angeles CA USA 2018 49 pp. 541–543.10.1002/sdtp.12776 ↗
28. 10.1109/TED.2021.307923210.1109/TED.2021.3079232 ↗
29. 10.1109/ted.2016.262756110.1109/ted.2016.2627561 ↗
30. 10.1109/JSSC.2015.250441610.1109/JSSC.2015.2504416 ↗
31. J. Kwon C. Lee Y. Chae and B. Murmann in Proc. IEEE Int. Symp. Circuits Syst. (ISCAS) Seville Spain 2020 pp. 1-5.10.1109/ISCAS45731.2020.9181216 ↗
32. 10.1109/TCSI.2023.331824710.1109/TCSI.2023.3318247 ↗
33. 10.1016/j.orgel.2011.01.02210.1016/j.orgel.2011.01.022 ↗
34. S. C. Yun C. D. Lee Y. S. Nam S. H. Heo Y. H. Park D. S. Oh B. S. So and J. K. Shin SID Symp. Dig. Tech. Pap. Seattle IL USA 2010 41 1 pp. 619-621.10.1889/1.3500545 ↗
35. K. H. Lim S. H. Park D. G. Lee J. H. Kim H. S. Shin J. J. Park and M. J. Lim SID Symp. Dig. Tech. Pap. Vancouver Canada 2013 44 1 pp. 1152-1154.10.1002/j.2168-0159.2013.tb06431.x ↗