A new AMOLED pixel circuit employing a‐Si:H TFTs for high aperture ratio

AbstractWe propose a new pixel design for active matrix organic light emitting diode (AM‐OLED) displays using hydrogenated amorphous silicon thin‐film transistors (a‐Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a‐Si:H TFTs and OLED.