Cell panel electrical test for evaluating the electrical characteristics of liquid crystal displays
Source abstract
Abstract
AbstractElectrical models of liquid crystal display (LCD) have been studied and used in design simulation. Using the right LCD models is indispensable to accomplish high-quality and highly reliable LCDs. This paper presents a cell panel electrical test (Cell-E Test) for evaluating the electrical characteristics of LCDs. The Cell-E Test was derived from in-process electrical testing for thin film transistor arrays, and utilizes charge measurement for measuring the capacitance value of a pixel. The capacitance-voltage (C-V) and capacitance-time (C-t) characteristics can be measured using a sweeping-applied voltage and based on the period of applying voltage in the Cell-E Test. In this study, actual C-V and C-t characteristics were measured by applying the Cell-E Test to a twisted-nematic active-matrix LCD (TN AM-LCD). The parameters of liquid crystal models were extracted from the data measured using the least-squares method, to show that design models can be verified with the actual parameters of cell panels through the Cell-E Test.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Liquid Crystal Research Advancements · Semiconductor Lasers and Optical Devices · Surface Roughness and Optical Measurements
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
1. Y. Kanatani and M. Ayukawa, Proceedings of IEEE Solid-State and Integrated Circuit Technology, Nagoya, Japan, 1995, p. 712.
2. M. Catelani, L. Ciani, and L. Cristaldi, Proceedings of IEEE Instrumentation and Measurement Technology Conference, Austin, Texas, 2010, p. 647.10.1109/IMTC.2010.5488035 ↗
3. Wishnieff R. · 1990
4. Miyake Y. · J. SID · 2008 · 16 · 83
5. Y. Miyake, K. Chikamatsu, and J. Mizoguchi, IDW 07 Digest (Society for Information Display, Sapporo, 2007), p. 157.
6. 10.1080/0267829041000167512910.1080/02678290410001675129 ↗
7. 10.1109/TDEI.2006.159341810.1109/TDEI.2006.1593418 ↗
8. M. Watanabe, K. Ishihara, T. Tsuruma, Y. Iguchi, Y. Nakajima, and Y. Maki, Proceedings of IEEE Behavioral Modeling and Simulation Workshop, San Jose, California, 2007, p. 132.
9. Park H. · J. SID · 2008 · 16 · 509
10. 10.1002/jsid.14310.1002/jsid.143 ↗
11. 10.1109/TSM.2013.225926810.1109/TSM.2013.2259268 ↗
12. 10.1889/1.290504510.1889/1.2905045 ↗
13. 10.1080/15980316.2009.965210310.1080/15980316.2009.9652103 ↗
14. Lee K. · J. SID · 2008 · 16 · 421