Oxide thin-film transistors based on i-line stepper process for high PPI displays
Source abstract
Abstract
Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a 1 um channel length were successfully fabricated by i-line lithography with a stepper process, resulting in high throughput. The a-IGZO TFT with a channel length of 1 μm exhibits high mobility of 8.77 cm2/Vs with an on/off current ratio of >3 × 1010. The stepper lithography process is capable of defect-free patterning given its precise layer-to-layer alignment and high image resolutions of the types required for large-area high-PPI displays. Consequently, IGZO TFTs can be fabricated on an 8-inch wafer with only minor electrical property deviations in the turn-on voltage, mobility, and on/off ratio. These results indicate that i-line lithography with a stepper process is a promising process for use in cutting-edge large-area electronics industries.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Chungnam National University, Daejeon, South Korea
National NanoFab Center (NNFC), Daejeon, South Korea
Department of Physics and Semiconductor Science, Dongguk University, Seoul, South Korea
Funding
Samsung Research Funding & Incubation Center of Samsung Electronics
References (27)
Show source-provided references
1. 10.1038/nature0309010.1038/nature03090 ↗
2. 10.1016/j.tsf.2011.07.01810.1016/j.tsf.2011.07.018 ↗
3. 10.1002/adma.20110322810.1002/adma.201103228 ↗
4. C.H. Oh, H.J. Shin, W.J. Nam, B. C. Ahn, S. Y. Cha, and S. D. Yeo, Presented at the SID Symposium Digest of Technical Papers, 2013.
5. 10.1016/j.cossms.2013.07.00210.1016/j.cossms.2013.07.002 ↗
6. Z. Yu, M. Hu, Z. Wang, G. Liu, B. Wang, P. Jang, D. Wang and H. Qiu, Presented at the SID Symposium Digest of Technical Papers, 2020.
7. 10.1109/5.23753410.1109/5.237534 ↗
8. 10.1016/j.snb.2005.02.00610.1016/j.snb.2005.02.006 ↗
9. 10.1063/1.190182910.1063/1.1901829 ↗
10. 10.1109/TED.2020.304892010.1109/TED.2020.3048920 ↗
11. 10.1088/2058-8585/ab639f10.1088/2058-8585/ab639f ↗
12. 10.1088/2399-1984/aad1d710.1088/2399-1984/aad1d7 ↗
13. 10.1039/D1NA00883H10.1039/D1NA00883H ↗
14. 10.1063/1.495244510.1063/1.4952445 ↗
15. C. Hohle, S. Döring, M. Friedrichs, A. Gehner, D. Rudloff, M. Schulze, R. Stübner, and D. Trenkler, Presented at the MOEMS and Miniaturized Systems XX, 2021.
16. K. Misumi, K. Saito, and H. Obiya, Presented at the Advances in Resist Technology and Processing XXII, 2005.
17. 10.1109/LED.2014.234990210.1109/LED.2014.2349902 ↗
18. 10.7567/JJAP.54.11410210.7567/JJAP.54.114102 ↗
19. 10.1007/s10832-011-9680-510.1007/s10832-011-9680-5 ↗
20. Y.H. Chen, C.Y. Chen, C.L. Cho, C.H. Hsieh, Y.C. Wu, K.S. Chang-Liao, and Y.H. Wu, Presented at the 2015 IEEE International Electron Devices Meeting (IEDM), 2015.
21. W.I. Han, D.H. Choi, H.W. So, W.R. Lee, J.W. Baek, and H. Choi, Presented at the SID Symposium Digest of Technical Papers, 2018.
22. 10.1002/adma.20150313310.1002/adma.201503133 ↗
23. 10.1016/j.synthmet.2020.11667010.1016/j.synthmet.2020.116670 ↗
24. 10.1109/TED.2020.297521110.1109/TED.2020.2975211 ↗
25. 10.1149/2.0121804jss10.1149/2.0121804jss ↗
26. 10.1109/TED.2021.311718810.1109/TED.2021.3117188 ↗
27. 10.1002/adfm.20190950110.1002/adfm.201909501 ↗