Effect of the spin-on-glass curing atmosphere on In–Ga–Zn–O thin-film transistors
Source abstract
Abstract
A solution-based spin-on glass (SOG) was applied to the gate insulator of an oxide thin-film transistor (TFT). The curing atmosphere of the SOG was investigated to enhance the performance of the self-aligned top-gate In–Ga–Zn–O (IGZO) TFT. After the SOG layer was formed on an IGZO active layer, curing was performed under N2, air, and O2 atmospheres. The curing under an N2 atmosphere resulted in the best device characteristics for the IGZO TFT. After curing, the SOG films were investigated via atomic force microscopy, secondary ion mass spectroscopy, Fourier transform infrared spectroscopy, and capacitance measurement. The results showed that the N2 pile-up at the back surface of the SOG is the main reason for the enhanced performance of the TFT after curing under an N2 atmosphere.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronics & Display Engineering, Hoseo University, Asan City, Republic of Korea
Department of ICT Automotive Engineering, Hoseo University, Dangjin City, Republic of Korea
Funding
National Research Foundation
References (28)
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