The change in the effective mass of the state density and the mobility of electrons while melting semiconductors being metallized

Abstract On the basis of the knowledge on electronic part of melting entropy, there was proposed a new method to estimate the effective mass of conducting electrons ( m n ⁎ ) in the semiconductors melts. On the example of the AIIISb compounds there is shown that melting according to the type semiconductor–metal is accompanied by a sharp increase of the m n ⁎ value. This suggests huge changes in energy spectrum of charge carriers at the phase transitions of this type. The electron mobilities un in liquid and solid phases at the melting temperature were also calculated. The sharp drop of the charge carriers' mobility at melting was shown. We have noticed a correlation in variations of m n ⁎ and un at phase transition and concluded that such situation is typical for substances which melt according to the type semiconductor–metal.